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Transistors / Power Field-Effect Transistors / FDP52N20
Datasheets
FDP52N20 by:

Power MOSFET, N-Channel, UniFETTM, 200V, 52A, 49mΩ, TO-220, 1000-TUBE

Part Details for FDP52N20 by onsemi

Overview of FDP52N20 by onsemi

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Applications Industrial Automation Energy and Power Systems Renewable Energy Automotive

Price & Stock for FDP52N20

Part # Distributor Description Stock Price Buy
DISTI # 31Y1386
Newark Mosfet Transistor, N Channel, 52 A, 200 V, 41 Mohm, 10 V, 5 V Rohs Compliant: Yes |Onsemi FDP52N20 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $2.4800
  • 10 $2.0600
  • 100 $1.6300
  • 500 $1.3800
  • 1,000 $1.1800
  • 3,000 $1.1100
  • 5,000 $1.0700
$1.0700 / $2.4800 Buy Now
DISTI # FDP52N20-ND
DigiKey MOSFET N-CH 200V 52A TO220-3 Min Qty: 1 Lead time: 24 Weeks Container: Tube Temporarily Out of Stock
  • 1 $2.3800
  • 50 $1.9090
  • 100 $1.5707
  • 500 $1.3290
  • 1,000 $1.1277
  • 2,000 $1.0713
  • 5,000 $1.0310
  • 10,000 $0.9969
$0.9969 / $2.3800 Buy Now
DISTI # FDP52N20
Avnet Americas Trans MOSFET N-CH 200V 52A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP52N20) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 24 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.1963
  • 2,000 $1.1643
  • 4,000 $1.1324
  • 6,000 $1.1005
  • 8,000 $1.0687
$1.0687 / $1.1963 Buy Now
DISTI # 512-FDP52N20
Mouser Electronics MOSFET 200V N-CHANNEL MOSFET RoHS: Compliant 521
  • 1 $2.4300
  • 10 $1.9500
  • 100 $1.6100
  • 500 $1.3600
  • 1,000 $1.1400
$1.1400 / $2.4300 Buy Now
Future Electronics FDP52N20 Series 200 V 52 A 0.049 Ohm Through Hole N-Channel MOSFET - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Lead time: 24 Weeks Container: Tube 0
Tube
  • 50 $1.1700
  • 200 $1.1300
  • 750 $1.1000
  • 1,250 $1.0900
  • 2,500 $1.0600
$1.0600 / $1.1700 Buy Now
Future Electronics FDP52N20 Series 200 V 52 A 0.049 Ohm Through Hole N-Channel MOSFET - TO-220-3 RoHS: Compliant pbFree: Yes Min Qty: 650 Package Multiple: 50 Lead time: 6 Weeks Container: Tube 0
Tube
  • 50 $1.1700
  • 200 $1.1300
  • 750 $1.1000
  • 1,250 $1.0900
  • 2,500 $1.0600
$1.0600 / $1.1700 Buy Now
DISTI # FDP52N20
TME Transistor: N-MOSFET, unipolar, 200V, 33A, 357W, TO220AB Min Qty: 1 0
  • 1 $2.3000
  • 10 $1.9100
  • 50 $1.6700
  • 100 $1.5700
  • 250 $1.4400
  • 500 $1.3400
$1.3400 / $2.3000 RFQ
DISTI # FDP52N20
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 0
  • 1,000 $1.0000
$1.0000 Buy Now
DISTI # FDP52N20
Avnet Asia Trans MOSFET N-CH 200V 52A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP52N20) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 24 Weeks, 0 Days 0
  • 1,000 $1.0859
  • 2,000 $1.0824
  • 3,000 $1.0719
  • 5,000 $1.0361
  • 10,000 $1.0002
  • 25,000 $0.9644
$0.9644 / $1.0859 Buy Now
DISTI # FDP52N20
Avnet Silica Trans MOSFET N-CH 200V 52A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP52N20) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 25 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDP52N20
EBV Elektronik Trans MOSFET N-CH 200V 52A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP52N20) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 26 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDP52N20

FDP52N20 CAD Models

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FDP52N20 Part Data Attributes:

Parametric Data
FDP52N20 onsemi
Buy Now Datasheet
Compare Parts:
FDP52N20 onsemi Power MOSFET, N-Channel, UniFETTM, 200V, 52A, 49mΩ, TO-220, 1000-TUBE
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description TO-220, 3 PIN
Manufacturer Package Code 340AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 10 Weeks
Samacsys Manufacturer onsemi
Additional Feature AVALANCHE ENERGY RATED
Avalanche Energy Rating (Eas) 2520 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 357 W
Pulsed Drain Current-Max (IDM) 208 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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