Part Details for FDMS86200DC by Fairchild Semiconductor Corporation
Overview of FDMS86200DC by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for FDMS86200DC
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Bristol Electronics | 12 |
|
RFQ |
Part Details for FDMS86200DC
FDMS86200DC CAD Models
FDMS86200DC Part Data Attributes
|
FDMS86200DC
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FDMS86200DC
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 9.3A I(D), 150V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | QFN | |
Package Description | ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 294 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 9.3 A | |
Drain-source On Resistance-Max | 0.017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240AA | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |