Part Details for FDMS7600AS by onsemi
Overview of FDMS7600AS by onsemi
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDMS7600AS
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
73R3650
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Newark | Mosfet Transistor, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, On Resistance Rds(On):0.0075Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation Pd:1W Rohs Compliant: Yes |Onsemi FDMS7600AS Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
64R3022
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Newark | Mosfet Transistor, Full Reel, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:40A, On Resistance Rds(On):0.0075Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Product Range:-Rohs Compliant: Yes |Onsemi FDMS7600AS Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 12A, 30V, 0.0075ohm, 2-Element, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 3000 |
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$0.9242 / $1.0900 | Buy Now |
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DISTI #
1813542
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element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$2.5391 / $2.8196 | Buy Now |
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DISTI #
1813542
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Farnell | RoHS: Compliant Min Qty: 3000 Lead time: 13 Weeks, 5 Days Container: Cut Tape | 0 |
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$1.2900 | Buy Now |
Part Details for FDMS7600AS
FDMS7600AS CAD Models
FDMS7600AS Part Data Attributes:
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FDMS7600AS
onsemi
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Datasheet
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FDMS7600AS
onsemi
Dual N-Channel PowerTrench® MOSFET 30V, 3000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | ROHS COMPLIANT, POWER 56, MLP, 8 PIN | |
| Manufacturer Package Code | 506DR | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | SOURCE | |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 12 A | |
| Drain-source On Resistance-Max | 0.0075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F6 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |