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Dual N-Channel Digital FET 25V, 0.50A, 0.45Ω, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K1450
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Newark | Dual N Channel Mosfet, 25V, Sc-70, Channel Type:N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:500Ma, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Onsemi FDG6303N Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 6000 |
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$0.1500 / $0.4870 | Buy Now |
DISTI #
35P2808
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:500Ma, Continuous Drain Current Id P Channel:-, No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi FDG6303N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1190 / $0.1280 | Buy Now |
DISTI #
79R5485
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Newark | Mosfet, Nn, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:500Ma, Drain Source Voltage Vds:25V, On Resistance Rds(On):0.34Ohm, Rds(On) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:800Mv, Power Dissipation Pd:300Mw, Rohs Compliant: Yes |Onsemi FDG6303N Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
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$0.1540 / $0.5000 | Buy Now |
DISTI #
25AC9537
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Newark | 25V Dual N-Fet 450 Mo Sc Rohs Compliant: Yes |Onsemi FDG6303N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1170 / $0.1390 | Buy Now |
DISTI #
FDG6303NCT-ND
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DigiKey | MOSFET 2N-CH 25V 500MA SC88 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
68083 In Stock |
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$0.1000 / $0.4600 | Buy Now |
DISTI #
FDG6303N
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Avnet Americas | MOSFET Array, Dual N Channel, 25 V, 500 mA, 450 Milliohms, SOT-363, 6 Pins - Tape and Reel (Alt: FDG6303N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
FDG6303N
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Avnet Americas | MOSFET Array, Dual N Channel, 25 V, 500 mA, 450 Milliohms, SOT-363, 6 Pins - Tape and Reel (Alt: FDG6303N) RoHS: Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.0982 / $0.1172 | Buy Now |
DISTI #
58K1450
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Avnet Americas | MOSFET Array, Dual N Channel, 25 V, 500 mA, 450 Milliohms, SOT-363, 6 Pins - Product that comes on tape, but is not reeled (Alt: 58K1450) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 41 Weeks, 4 Days Container: Ammo Pack | 6000 Partner Stock |
|
$0.1950 / $0.4870 | Buy Now |
DISTI #
512-FDG6303N
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Mouser Electronics | MOSFET SC70-6 N-CH 25V RoHS: Compliant | 7637 |
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$0.1000 / $0.4600 | Buy Now |
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Future Electronics | Dual N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SC70-6 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 114000Reel |
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$0.0981 / $0.1100 | Buy Now |
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FDG6303N
onsemi
Buy Now
Datasheet
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Compare Parts:
FDG6303N
onsemi
Dual N-Channel Digital FET 25V, 0.50A, 0.45Ω, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SC-70, 6 PIN | |
Manufacturer Package Code | 419B-02 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 40 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 0.5 A | |
Drain-source On Resistance-Max | 0.45 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDG6303N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG6303N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDG6303NL99Z | Small Signal Field-Effect Transistor, 0.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDG6303N vs FDG6303NL99Z |