Part Details for FDFME2P823ZT by onsemi
Overview of FDFME2P823ZT by onsemi
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Part Details for FDFME2P823ZT
FDFME2P823ZT CAD Models
FDFME2P823ZT Part Data Attributes:
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FDFME2P823ZT
onsemi
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FDFME2P823ZT
onsemi
Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | 1.60 X 1.60 MM, HALOGEN FREE AND ROHS COMPLIANT, THIN, MICROFET-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | ESD PROTECTION | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2.6 A | |
Drain-source On Resistance-Max | 0.142 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 75 pF | |
JESD-30 Code | S-PDSO-N6 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.3 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |