Part Details for FDD7N20TM by Fairchild Semiconductor Corporation
Overview of FDD7N20TM by Fairchild Semiconductor Corporation
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for FDD7N20TM
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 250 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | 20 |
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$0.5008 / $0.6009 | Buy Now |
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 5A I(D), 200V, 0.69OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | 200 |
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$0.4725 / $0.9450 | Buy Now |
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Chip1Cloud | MOSFET N-CH 200V 5A D-PAK | 55000 |
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RFQ | |
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Perfect Parts Corporation | 28408 |
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RFQ |
Part Details for FDD7N20TM
FDD7N20TM CAD Models
FDD7N20TM Part Data Attributes:
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FDD7N20TM
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDD7N20TM
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 5A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, TO-252AB, DPAK-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | ROHS COMPLIANT, TO-252AB, DPAK-3 | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 62.5 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 5 A | |
| Drain-source On Resistance-Max | 0.69 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 43 W | |
| Pulsed Drain Current-Max (IDM) | 15 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDD7N20TM
This table gives cross-reference parts and alternative options found for FDD7N20TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD7N20TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD7N20TM | 200V N-Channel QFET®, TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB, 2500/TAPE REEL | Fairchild Semiconductor Corporation | FDD7N20TM vs FQD7N20TM |
| IRFR220A | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Fairchild Semiconductor Corporation | FDD7N20TM vs IRFR220A |
| FQD4N20 | Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD7N20TM vs FQD4N20 |
| PHD9NQ20T/T3 | TRANSISTOR 8.7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, SC-63, DPAK-3, FET General Purpose Power | NXP Semiconductors | FDD7N20TM vs PHD9NQ20T/T3 |
| FQB4N20TM | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 | Fairchild Semiconductor Corporation | FDD7N20TM vs FQB4N20TM |
| IRFR222 | 3.8A, 200V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | FDD7N20TM vs IRFR222 |
| FQD10N20TM | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD7N20TM vs FQD10N20TM |
| FQD4N20TM | Power Field-Effect Transistor, 3A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD7N20TM vs FQD4N20TM |
| FQD7N20TF | Power Field-Effect Transistor, 5.3A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD7N20TM vs FQD7N20TF |
| 2SK215-E | N Channel MOSFET, TO-220AB, /Tube | Renesas Electronics Corporation | FDD7N20TM vs 2SK215-E |