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Transistors / Small Signal Field-Effect Transistors / DMN1150UFB-7B
Datasheets
DMN1150UFB-7B by:

Small Signal Field-Effect Transistor, 1.41A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, X1-DFN1006-3, 3 PIN

Part Details for DMN1150UFB-7B by Diodes Incorporated

Overview of DMN1150UFB-7B by Diodes Incorporated

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Price & Stock for DMN1150UFB-7B

Part # Distributor Description Stock Price Buy
DISTI # 28AK8475
Newark Mosfet, N-Ch, 12V, 1.41A, X1-Dfn1006 Rohs Compliant: Yes |Diodes Inc. DMN1150UFB-7B Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 9075
  • 1 $0.4160
  • 10 $0.2220
  • 25 $0.1850
  • 50 $0.1480
  • 100 $0.1110
  • 250 $0.1000
  • 500 $0.0880
  • 1,000 $0.0770
$0.0770 / $0.4160 Buy Now
DISTI # DMN1150UFB-7BDICT-ND
DigiKey MOSFET N-CH 12V 1.41A 3DFN Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 24659
In Stock
  • 1 $0.4300
  • 10 $0.2990
  • 100 $0.1512
  • 500 $0.1234
  • 1,000 $0.0915
  • 2,000 $0.0770
  • 5,000 $0.0736
  • 10,000 $0.0637
  • 30,000 $0.0625
  • 50,000 $0.0517
$0.0517 / $0.4300 Buy Now
DISTI # DMN1150UFB-7B
Avnet Americas Trans MOSFET N-CH 12V 1.41A 3-Pin DFN T/R - Tape and Reel (Alt: DMN1150UFB-7B) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks, 0 Days Container: Reel 390000 Factory Stock
  • 10,000 $0.0461
  • 20,000 $0.0445
  • 40,000 $0.0432
  • 60,000 $0.0419
  • 80,000 $0.0403
  • 100,000 $0.0397
  • 1,000,000 $0.0391
$0.0391 / $0.0461 Buy Now
DISTI # 621-DMN1150UFB-7B
Mouser Electronics MOSFET N-CH MOSFET 12V RoHS: Compliant 18919
  • 1 $0.3900
  • 10 $0.2210
  • 100 $0.0980
  • 1,000 $0.0740
  • 2,500 $0.0660
  • 10,000 $0.0630
  • 20,000 $0.0570
  • 50,000 $0.0510
$0.0510 / $0.3900 Buy Now
DISTI # V72:2272_06697949
Arrow Electronics Trans MOSFET N-CH 12V 1.41A 3-Pin X1-DFN T/R RoHS: Compliant Min Qty: 1742 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2314 Container: Cut Strips Americas - 19880
  • 1,742 $0.0574
  • 3,000 $0.0568
  • 6,000 $0.0544
  • 15,000 $0.0444
$0.0444 / $0.0574 Buy Now
DISTI # 70438059
RS MOSFET N-channel 12V 1.4A DFN1006-3 | Diodes Inc DMN1150UFB-7B RoHS: Not Compliant Min Qty: 50 Package Multiple: 1 Container: Bulk 0
  • 50 $0.1620
  • 250 $0.1540
  • 500 $0.1460
  • 2,500 $0.1300
  • 5,000 $0.1130
$0.1130 / $0.1620 RFQ
Future Electronics Single N-Channel 12 V 210 mOhm 1.5 nC 0.5 W Silicon SMT Mosfet - UFDFN-3 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 10,000 $0.0437
  • 20,000 $0.0427
  • 30,000 $0.0421
  • 50,000 $0.0414
  • 100,000 $0.0399
$0.0399 / $0.0437 Buy Now
Future Electronics Single N-Channel 12 V 210 mOhm 1.5 nC 0.5 W Silicon SMT Mosfet - UFDFN-3 RoHS: Compliant pbFree: Yes Min Qty: 10000 Package Multiple: 10000 Lead time: 8 Weeks Container: Reel 0
Reel
  • 10,000 $0.0437
  • 20,000 $0.0427
  • 30,000 $0.0421
  • 50,000 $0.0414
  • 100,000 $0.0399
$0.0399 / $0.0437 Buy Now
DISTI # DMN1150UFB-7B
Avnet Asia Trans MOSFET N-CH 12V 1.41A 3-Pin DFN T/R (Alt: DMN1150UFB-7B) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 12 Weeks, 0 Days 0
RFQ
DISTI # DMN1150UFB-7B
Avnet Silica Trans MOSFET N-CH 12V 1.41A 3-Pin DFN T/R (Alt: DMN1150UFB-7B) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks, 0 Days Silica - 20000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 10000 20000
  • 10,000 $0.0717
  • 20,000 $0.0663
$0.0663 / $0.0717 Buy Now

Part Details for DMN1150UFB-7B

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DMN1150UFB-7B Part Data Attributes

Parametric Data
DMN1150UFB-7B Diodes Incorporated
Buy Now Datasheet
Compare Parts:
DMN1150UFB-7B Diodes Incorporated Small Signal Field-Effect Transistor, 1.41A I(D), 12V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, X1-DFN1006-3, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description X1-DFN1006-3, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Diodes Incorporated
Additional Feature HIGH RELIABILITY
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 1.41 A
Drain-source On Resistance-Max 0.21 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PBCC-N3
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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