Datasheets
CY14B116N-BA25XI by:
Cypress Semiconductor
Cypress Semiconductor
Infineon Technologies AG
Not Found

Non-Volatile SRAM, 1MX16, 25ns, CMOS, PBGA60, 10 X 18 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-60

Part Details for CY14B116N-BA25XI by Cypress Semiconductor

Results Overview of CY14B116N-BA25XI by Cypress Semiconductor

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Applications Industrial Automation Computing and Data Storage Telecommunications Renewable Energy Robotics and Drones

CY14B116N-BA25XI Information

CY14B116N-BA25XI by Cypress Semiconductor is an SRAM.
SRAMs are under the broader part category of Memory Components.

Memory components are essential in electronics for computer processing. They can be volatile or non-volatile, depending on the desired function. Read more about Memory Components on our Memory part category page.

Price & Stock for CY14B116N-BA25XI

Part # Distributor Description Stock Price Buy
DISTI # 2156-CY14B116N-BA25XI-ND
DigiKey IC NVSRAM 16MBIT PARALLEL 60FBGA Min Qty: 5 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 26
In Stock
  • 5 $72.8000
$72.8000 Buy Now
DISTI # 86102531
Verical NVRAM NVSRAM Parallel 16Mbit 3V/3.3V 60-Pin FBGA Tray RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1601 Americas - 26
  • 5 $87.5000
$87.5000 Buy Now
Rochester Electronics Non-Volatile SRAM, 1MX16, 25ns PBGA60 RoHS: Compliant pbFree: No Status: Active Min Qty: 1 26
  • 1 $70.0000
  • 25 $68.6000
  • 100 $65.8000
  • 500 $63.0000
  • 1,000 $59.5000
$59.5000 / $70.0000 Buy Now
Flip Electronics Stock 2128
RFQ

Part Details for CY14B116N-BA25XI

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CY14B116N-BA25XI Part Data Attributes

CY14B116N-BA25XI Cypress Semiconductor
Buy Now Datasheet
Compare Parts:
CY14B116N-BA25XI Cypress Semiconductor Non-Volatile SRAM, 1MX16, 25ns, CMOS, PBGA60, 10 X 18 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-60
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Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP
Reach Compliance Code compliant
ECCN Code 3A001.A.2
HTS Code 8542.90.00.00
Date Of Intro 2016-07-22
Access Time-Max 25 ns
JESD-30 Code R-PBGA-B60
JESD-609 Code e1
Length 18 mm
Memory Density 16777216 bit
Memory IC Type NON-VOLATILE SRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 60
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 1MX16
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Seated Height-Max 1.2 mm
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V
Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 0.75 mm
Terminal Position BOTTOM
Width 10 mm

CY14B116N-BA25XI Related Parts

CY14B116N-BA25XI Frequently Asked Questions (FAQ)

  • The recommended operating voltage range for CY14B116N-BA25XI is 2.7V to 3.6V.

  • It is recommended to follow a controlled power-up and power-down sequence to prevent unwanted writes to the device. A power-on reset (POR) circuit can be used to ensure a clean power-up sequence.

  • The maximum clock frequency supported by CY14B116N-BA25XI is 25 MHz.

  • To implement a reliable write operation, ensure that the write enable (WREN) signal is asserted before the write cycle, and de-asserted after the write cycle is complete. Also, ensure that the write cycle is completed within the specified tWC (write cycle time) parameter.

  • The WP (write protect) pin is used to prevent writes to the status register and the memory array. When WP is asserted, writes to the status register and memory array are inhibited.