Part Details for BSS84AKW,115 by NXP Semiconductors
Overview of BSS84AKW,115 by NXP Semiconductors
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for BSS84AKW,115
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 0.15A I(D), 50V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 2000 |
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$0.0600 / $0.2000 | Buy Now |
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Ameya Holding Limited | 62942 |
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RFQ |
Part Details for BSS84AKW,115
BSS84AKW,115 CAD Models
BSS84AKW,115 Part Data Attributes:
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BSS84AKW,115
NXP Semiconductors
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Datasheet
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BSS84AKW,115
NXP Semiconductors
BSS84AKW - 50 V, 150 mA P-channel Trench MOSFET SC-70 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | SC-70 | |
Package Description | PLASTIC, SC-70, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | SOT323 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 0.15 A | |
Drain-source On Resistance-Max | 8.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.31 W | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |