Part Details for BSS123 by Yangzhou Yangjie Electronics Co Ltd
Overview of BSS123 by Yangzhou Yangjie Electronics Co Ltd
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for BSS123
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSS123-YAN
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TME | Transistor: N-MOSFET, TRENCH POWER MV, unipolar, 100V, 0.16A Min Qty: 25 | 0 |
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$0.0112 / $0.0350 | RFQ |
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LCSC | 100V 200mA 5200mA10V 350mW 3V250uA 1PCSNChannel SOT-23(TO-236) MOSFETs ROHS | 13040 |
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$0.0110 / $0.0217 | Buy Now |
Part Details for BSS123
BSS123 CAD Models
BSS123 Part Data Attributes
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BSS123
Yangzhou Yangjie Electronics Co Ltd
Buy Now
Datasheet
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BSS123
Yangzhou Yangjie Electronics Co Ltd
Small Signal Field-Effect Transistor, 0.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 0.2 A | |
Drain-source On Resistance-Max | 5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.35 W | |
Power Dissipation-Max (Abs) | 0.35 W | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |