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BSS123,215 by:

BSS123 - N-channel TrenchMOS logic level FET TO-236 3-Pin

Part Details for BSS123,215 by NXP Semiconductors

Overview of BSS123,215 by NXP Semiconductors

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Price & Stock for BSS123,215

Part # Distributor Description Stock Price Buy
Quest Components 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 8001
  • 1 $0.0676
  • 1,184 $0.0304
  • 6,576 $0.0220
$0.0220 / $0.0676 Buy Now
Quest Components 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1908
  • 1 $0.1690
  • 75 $0.0761
  • 658 $0.0507
$0.0507 / $0.1690 Buy Now
Quest Components 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 904
  • 1 $0.2000
  • 101 $0.0600
  • 834 $0.0400
$0.0400 / $0.2000 Buy Now
Quest Components 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 37
  • 1 $0.1610
  • 32 $0.0805
$0.0805 / $0.1610 Buy Now
Rochester Electronics BSS123 - 100 V, N-channel Trench MOSFET RoHS: Compliant Status: Active Min Qty: 1 153
  • 1 $0.0265
  • 25 $0.0260
  • 100 $0.0249
  • 500 $0.0238
  • 1,000 $0.0225
$0.0225 / $0.0265 Buy Now
Ameya Holding Limited BSS123 Series 100 V 6 O 25 mW N-Channel TrenchMOS Logic Level FET - SOT-23 9000
RFQ

Part Details for BSS123,215

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BSS123,215 Part Data Attributes

BSS123,215 NXP Semiconductors
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BSS123,215 NXP Semiconductors BSS123 - N-channel TrenchMOS logic level FET TO-236 3-Pin
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Part Package Code TO-236
Package Description PLASTIC, SMD, 3 PIN
Pin Count 3
Manufacturer Package Code SOT23
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.15 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 10 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.25 W
Power Dissipation-Max (Abs) 0.25 W
Qualification Status Not Qualified
Reference Standard IEC-134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSS123,215

This table gives cross-reference parts and alternative options found for BSS123,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS123TRL13 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123,215 vs BSS123TRL13
BSS123TRL TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123,215 vs BSS123TRL
933946340215 Small Signal Field-Effect Transistor Nexperia BSS123,215 vs 933946340215
BSS123T/R Small Signal Field-Effect Transistor Nexperia BSS123,215 vs BSS123T/R
BSS123235 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123,215 vs BSS123235
BSS123 Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Nexperia BSS123,215 vs BSS123
Part Number Description Manufacturer Compare
2N7002T TRANSISTOR 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal NXP Semiconductors BSS123,215 vs 2N7002T
BSS192,135 BSS192 - 240 V, P-channel vertical D-MOS transistor SOT-89 3-Pin NXP Semiconductors BSS123,215 vs BSS192,135
VP2206N2 Small Signal Field-Effect Transistor, 0.75A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, GREEN TO-39, 3 PIN Supertex Inc BSS123,215 vs VP2206N2
MMBF5103 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation BSS123,215 vs MMBF5103
2SK3335TP 8000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TP, 3 PIN SANYO Electric Co Ltd BSS123,215 vs 2SK3335TP
TN2124K1-G Small Signal Field-Effect Transistor, 0.134A I(D), 240V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3 Supertex Inc BSS123,215 vs TN2124K1-G
VN2210N2 Small Signal Field-Effect Transistor, 1.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN Supertex Inc BSS123,215 vs VN2210N2
BSS131E-6327 100mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN Infineon Technologies AG BSS123,215 vs BSS131E-6327
VP0204N5 Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc BSS123,215 vs VP0204N5
2N6661 Small Signal Field-Effect Transistor, 0.35A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN Supertex Inc BSS123,215 vs 2N6661

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