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Power Field-Effect Transistor, 7.1A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
V79:2366_26427735
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Arrow Electronics | Trans MOSFET N-CH 30V 7.1A Automotive AEC-Q101 6-Pin TSOP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1841 | Americas - 3 |
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$0.2773 | Buy Now |
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Bristol Electronics | 1608 |
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RFQ | ||
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Rochester Electronics | BSL302 - 250V-600V Small Signal/Small Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 600 |
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$0.1644 / $0.1934 | Buy Now |
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BSL302SNH6327XTSA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSL302SNH6327XTSA1
Infineon Technologies AG
Power Field-Effect Transistor, 7.1A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | TSOP-6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 30 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 7.1 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 28 A | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSL302SNH6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSL302SNH6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSL302SN | Power Field-Effect Transistor, 7.1A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6 | Infineon Technologies AG | BSL302SNH6327XTSA1 vs BSL302SN |
STS8NFS30L | 8A, 30V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 | STMicroelectronics | BSL302SNH6327XTSA1 vs STS8NFS30L |
FSS204 | Power Field-Effect Transistor, 8A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | SANYO Electric Co Ltd | BSL302SNH6327XTSA1 vs FSS204 |
IRF7403TRPBF | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, | Infineon Technologies AG | BSL302SNH6327XTSA1 vs IRF7403TRPBF |