Datasheets
BSL302SNH6327XTSA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 7.1A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6

Part Details for BSL302SNH6327XTSA1 by Infineon Technologies AG

Overview of BSL302SNH6327XTSA1 by Infineon Technologies AG

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Applications Healthcare Electronic Manufacturing

Price & Stock for BSL302SNH6327XTSA1

Part # Distributor Description Stock Price Buy
DISTI # V79:2366_26427735
Arrow Electronics Trans MOSFET N-CH 30V 7.1A Automotive AEC-Q101 6-Pin TSOP T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1841 Americas - 3
  • 1 $0.2773
$0.2773 Buy Now
Bristol Electronics   1608
RFQ
Rochester Electronics BSL302 - 250V-600V Small Signal/Small Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 600
  • 1 $0.1934
  • 25 $0.1895
  • 100 $0.1818
  • 500 $0.1741
  • 1,000 $0.1644
$0.1644 / $0.1934 Buy Now

Part Details for BSL302SNH6327XTSA1

BSL302SNH6327XTSA1 CAD Models

BSL302SNH6327XTSA1 Part Data Attributes

BSL302SNH6327XTSA1 Infineon Technologies AG
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BSL302SNH6327XTSA1 Infineon Technologies AG Power Field-Effect Transistor, 7.1A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description TSOP-6
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 30 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7.1 A
Drain-source On Resistance-Max 0.025 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 28 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for BSL302SNH6327XTSA1

This table gives cross-reference parts and alternative options found for BSL302SNH6327XTSA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSL302SNH6327XTSA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSL302SN Power Field-Effect Transistor, 7.1A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TSOP-6 Infineon Technologies AG BSL302SNH6327XTSA1 vs BSL302SN
STS8NFS30L 8A, 30V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, SO-8 STMicroelectronics BSL302SNH6327XTSA1 vs STS8NFS30L
FSS204 Power Field-Effect Transistor, 8A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd BSL302SNH6327XTSA1 vs FSS204
IRF7403TRPBF Power Field-Effect Transistor, 6.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, Infineon Technologies AG BSL302SNH6327XTSA1 vs IRF7403TRPBF

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