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Transistors / Power Field-Effect Transistors / BSC320N20NS3GATMA1
Datasheets
BSC320N20NS3GATMA1 by:

Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC320N20NS3GATMA1 by Infineon Technologies AG

Overview of BSC320N20NS3GATMA1 by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for BSC320N20NS3GATMA1

Part # Distributor Description Stock Price Buy
DISTI # 79X1337
Newark Mosfet, N-Ch, 200V, 36A, Pg-Tdson- 8, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:36A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2042
  • 1 $3.3600
  • 10 $2.8200
  • 25 $2.6400
  • 50 $2.4500
  • 100 $2.2800
  • 250 $2.1500
  • 500 $2.0300
  • 1,000 $1.7400
$1.7400 / $3.3600 Buy Now
DISTI # 78AH9594
Newark Trench >=100V Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 0 Container: Reel 35000
  • 1 $1.8700
$1.8700 Buy Now
DISTI # 86AK4479
Newark Mosfet, N-Ch, 200V, 36A, Tdson Rohs Compliant: Yes |Infineon BSC320N20NS3GATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $1.5700
$1.5700 Buy Now
DISTI # BSC320N20NS3GATMA1CT-ND
DigiKey MOSFET N-CH 200V 36A TDSON-8 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 20527
In Stock
  • 1 $3.2300
  • 10 $2.7090
  • 100 $2.1916
  • 500 $1.9481
  • 1,000 $1.6681
  • 2,000 $1.5707
  • 5,000 $1.5069
$1.5069 / $3.2300 Buy Now
DISTI # BSC320N20NS3GATMA1
Avnet Americas Trans MOSFET N-CH 200V 36A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC320N20NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel 35000
  • 5,000 $1.8685
$1.8685 Buy Now
DISTI # 79X1337
Avnet Americas Trans MOSFET N-CH 200V 36A 8-Pin TDSON T/R - Product that comes on tape, but is not reeled (Alt: 79X1337) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack 2042 Partner Stock
  • 1 $3.3500
  • 10 $2.8100
  • 25 $2.6500
  • 50 $2.4600
  • 100 $2.2800
$2.2800 / $3.3500 Buy Now
DISTI # 726-BSC320N20NS3GATM
Mouser Electronics MOSFET N-Ch 200V 36A TDSON-8 OptiMOS 3 RoHS: Compliant 7606
  • 1 $3.2300
  • 10 $2.7100
  • 25 $2.6000
  • 100 $2.1900
  • 250 $2.1800
  • 500 $1.9500
  • 1,000 $1.5800
  • 2,500 $1.5700
  • 5,000 $1.5000
$1.5000 / $3.2300 Buy Now
DISTI # E02:0323_00822332
Arrow Electronics Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks Date Code: 2404 Europe - 45000
  • 5,000 $1.4673
$1.4673 Buy Now
DISTI # V72:2272_06378798
Arrow Electronics Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2339 Container: Cut Strips Americas - 4700
  • 1 $3.1840
  • 10 $2.6550
  • 25 $2.5850
  • 100 $2.1750
  • 250 $2.1560
  • 500 $1.8450
  • 1,000 $1.5650
  • 3,000 $1.5460
$1.5460 / $3.1840 Buy Now
Future Electronics Single N-Channel 200 V 32 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 5000
Reel
  • 5,000 $1.5400
$1.5400 Buy Now
Future Electronics Single N-Channel 200 V 32 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 5,000 $1.5400
$1.5400 Buy Now
Future Electronics Single N-Channel 200 V 32 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 5,000 $1.5400
$1.5400 Buy Now
DISTI # 79362923
Verical Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2404 Americas - 45000
  • 5,000 $1.4688
$1.4688 Buy Now
DISTI # 71253270
Verical Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP T/R Min Qty: 4 Package Multiple: 1 Date Code: 2339 Americas - 4700
  • 4 $3.1840
  • 10 $2.6550
  • 25 $2.5850
  • 100 $2.1750
  • 250 $2.1560
  • 500 $1.8450
  • 1,000 $1.5650
  • 3,000 $1.5460
$1.5460 / $3.1840 Buy Now
DISTI # 71240549
Verical Trans MOSFET N-CH 200V 36A 8-Pin TDSON EP T/R Min Qty: 15 Package Multiple: 1 Date Code: 2335 Americas - 2874
  • 15 $2.1500
  • 50 $1.7375
  • 100 $1.6250
  • 200 $1.6125
  • 500 $1.4375
  • 1,000 $1.3500
  • 2,000 $1.3125
$1.3125 / $2.1500 Buy Now
Ameya Holding Limited Single N-Channel 200 V 32 mOhm 22 nC OptiMOS™ Power Mosfet - TDSON-8 3803
RFQ
NexGen Digital   4
RFQ
Chip1Cloud MOSFET N-CH 200V 36A TDSON-8 15000
RFQ
DISTI # C1S322000840355
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 2874
  • 1 $2.7000
  • 10 $1.7200
  • 50 $1.3900
  • 100 $1.3000
  • 200 $1.2900
  • 500 $1.1500
  • 1,000 $1.0800
  • 2,000 $1.0500
$1.0500 / $2.7000 Buy Now
New Advantage Corporation Single N-Channel 200 V 32 mOhm 22 nC OptiMOS� Power Mosfet - TDSON-8 RoHS: Compliant Min Qty: 1 Package Multiple: 5000 10000
  • 5,000 $2.1600
  • 10,000 $2.0100
$2.0100 / $2.1600 Buy Now
Win Source Electronics MOSFET N-CH 200V 36A TDSON-8 271137
  • 30 $1.8370
  • 70 $1.5080
  • 105 $1.4610
  • 145 $1.4130
  • 185 $1.3660
  • 245 $1.2250
$1.2250 / $1.8370 Buy Now

Part Details for BSC320N20NS3GATMA1

BSC320N20NS3GATMA1 CAD Models

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BSC320N20NS3GATMA1 Part Data Attributes:

Parametric Data
BSC320N20NS3GATMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSC320N20NS3GATMA1 Infineon Technologies AG Power Field-Effect Transistor, 36A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Pbfree Code No
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Pin Count 8
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 190 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 144 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC320N20NS3GATMA1

This table gives cross-reference parts and alternative options found for BSC320N20NS3GATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC320N20NS3GATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPD320N20N3GXT Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG BSC320N20NS3GATMA1 vs IPD320N20N3GXT
IPB320N20N3GATMA1 Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG BSC320N20NS3GATMA1 vs IPB320N20N3GATMA1
IPD320N20N3GATMA1 Power Field-Effect Transistor, 34A I(D), 200V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3/2 PIN Infineon Technologies AG BSC320N20NS3GATMA1 vs IPD320N20N3GATMA1
BSC350N20NSFDATMA1 Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSO8, TDSON-8 Infineon Technologies AG BSC320N20NS3GATMA1 vs BSC350N20NSFDATMA1

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