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Transistors / Power Field-Effect Transistors / BSC097N06NSATMA1
Datasheets
BSC097N06NSATMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

Part Details for BSC097N06NSATMA1 by Infineon Technologies AG

Overview of BSC097N06NSATMA1 by Infineon Technologies AG

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Price & Stock for BSC097N06NSATMA1

Part # Distributor Description Stock Price Buy
DISTI # 97Y1250
Newark Mosfet, N-Ch, 60V, 46A, Pg-Tdson-8, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:46A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.8V Rohs Compliant: Yes |Infineon BSC097N06NSATMA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 3647
  • 1 $0.8420
  • 10 $0.7260
  • 25 $0.6770
  • 50 $0.6280
  • 100 $0.5790
  • 250 $0.5380
  • 500 $0.4960
  • 1,000 $0.3910
$0.3910 / $0.8420 Buy Now
DISTI # 86AK4469
Newark Mosfet, N-Ch, 60V, 46A, Pg-Tdson Rohs Compliant: Yes |Infineon BSC097N06NSATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 5,000 $0.3680
  • 10,000 $0.3560
  • 20,000 $0.3560
  • 30,000 $0.3550
$0.3550 / $0.3680 Buy Now
DISTI # BSC097N06NSATMA1CT-ND
DigiKey MOSFET N-CH 60V 46A TDSON-8-6 Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 19436
In Stock
  • 1 $0.9100
  • 10 $0.7450
  • 100 $0.5795
  • 500 $0.4912
  • 1,000 $0.4001
  • 2,000 $0.3766
  • 5,000 $0.3587
  • 10,000 $0.3422
  • 25,000 $0.3415
$0.3415 / $0.9100 Buy Now
DISTI # BSC097N06NSATMA1
Avnet Americas Trans MOSFET N-CH 60V 46A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC097N06NSATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.3643
  • 10,000 $0.3529
  • 20,000 $0.3416
  • 30,000 $0.3302
  • 40,000 $0.3188
$0.3188 / $0.3643 Buy Now
DISTI # 726-BSC097N06NSATMA1
Mouser Electronics MOSFET N-Ch 60V 46A TDSON-8 RoHS: Compliant 7902
  • 1 $0.9100
  • 10 $0.7450
  • 100 $0.5800
  • 500 $0.4920
  • 1,000 $0.3770
  • 5,000 $0.3440
  • 10,000 $0.3420
$0.3420 / $0.9100 Buy Now
Future Electronics Single N-Channel 60 V 9.7 mOhm 12 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 15000
Reel
  • 5,000 $0.2050
  • 10,000 $0.2000
  • 15,000 $0.1980
  • 20,000 $0.1960
  • 25,000 $0.1910
$0.1910 / $0.2050 Buy Now
Future Electronics Single N-Channel 60 V 9.7 mOhm 12 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Lead time: 20 Weeks Container: Reel 0
Reel
  • 5,000 $0.3150
  • 10,000 $0.3050
$0.3050 / $0.3150 Buy Now
DISTI # 69266236
Verical Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R Min Qty: 47 Package Multiple: 1 Date Code: 2212 Americas - 49828
  • 47 $0.6775
  • 55 $0.5763
  • 100 $0.4938
  • 200 $0.4675
  • 500 $0.4375
  • 1,000 $0.4100
  • 5,000 $0.3612
  • 10,000 $0.3388
$0.3388 / $0.6775 Buy Now
DISTI # 80317576
Verical Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2410 Americas - 25000
  • 5,000 $0.3101
  • 10,000 $0.3056
  • 25,000 $0.3029
$0.3029 / $0.3101 Buy Now
DISTI # 77297962
Verical Trans MOSFET N-CH 60V 12A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Date Code: 2307 Americas - 10000
  • 5,000 $0.3823
$0.3823 Buy Now
DISTI # BSC097N06NSATMA1
TME Transistor: N-MOSFET, unipolar, 60V, 46A, 36W, PG-TDSON-8 Min Qty: 1 0
  • 1 $1.4030
  • 5 $0.7560
  • 25 $0.6340
  • 100 $0.5680
  • 500 $0.5290
$0.5290 / $1.4030 RFQ
Ameya Holding Limited   Min Qty: 5000 4500
  • 5,000 $0.5662
  • 25,000 $0.5491
$0.5491 / $0.5662 Buy Now
Ameya Holding Limited Single N-Channel 60 V 9.7 mOhm 12 nC OptiMOS™ Power Mosfet - TDSON-8 3951
RFQ
DISTI # C1S322000444911
Chip1Stop MOSFET RoHS: Compliant Container: Cut Tape 49828
  • 5 $0.7250
  • 10 $0.5420
  • 50 $0.4610
  • 100 $0.3950
  • 200 $0.3740
  • 500 $0.3500
  • 1,000 $0.3280
  • 5,000 $0.2890
  • 10,000 $0.2710
$0.2710 / $0.7250 Buy Now
CHIPMALL.COM LIMITED OptiMOS 5 60V is optimized for synchronous rectification in switched mode power supplies SMPS such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. 1984
  • 1 $0.3188
$0.3188 Buy Now
DISTI # SP001067004
EBV Elektronik Trans MOSFET N-CH 60V 46A 8-Pin TDSON T/R (Alt: SP001067004) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 21 Weeks, 0 Days EBV - 20000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 5000 10000
  • 5,000 $0.2729
  • 10,000 $0.2547
$0.2547 / $0.2729 Buy Now
Win Source Electronics MOSFET N-CH 60V 46A TDSON-8-6 / N-Channel 60 V 46A (Tc) 2.5W (Ta), 36W (Tc) Surface Mount PG-TDSON-8-6 561000
  • 60 $0.8480
  • 145 $0.6960
  • 225 $0.6740
  • 310 $0.6530
  • 400 $0.6310
  • 535 $0.5660
$0.5660 / $0.8480 Buy Now

Part Details for BSC097N06NSATMA1

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BSC097N06NSATMA1 Part Data Attributes

Parametric Data
BSC097N06NSATMA1 Infineon Technologies AG
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BSC097N06NSATMA1 Infineon Technologies AG Power Field-Effect Transistor, 12A I(D), 60V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 13 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.0097 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 184 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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