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Part Details for BSC093N15NS5ATMA1 by Infineon Technologies AG
Overview of BSC093N15NS5ATMA1 by Infineon Technologies AG
- Distributor Offerings: (13 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for BSC093N15NS5ATMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC8339
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Newark | Mosfet, N-Ch, 150V, 87A, 150Deg C, 139W, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:87A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.8V Rohs Compliant: Yes |Infineon BSC093N15NS5ATMA1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 7475 |
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$1.3800 | Buy Now |
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DISTI #
86AK4466
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Newark | Mosfet, N-Ch, 150V, 87A, Tdson Rohs Compliant: Yes |Infineon BSC093N15NS5ATMA1 Min Qty: 5000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.8300 | Buy Now |
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DISTI #
BSC093N15NS5ATMA1CT-ND
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DigiKey | MOSFET N-CH 150V 87A TDSON Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5393 In Stock |
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$1.7551 / $3.7600 | Buy Now |
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DISTI #
BSC093N15NS5ATMA1
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Avnet Americas | Trans MOSFET N-CH 150V 55A 8-Pin TDSON EP - Tape and Reel (Alt: BSC093N15NS5ATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 26 Weeks, 0 Days Container: Reel | 10000 |
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$1.6381 / $1.8722 | Buy Now |
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DISTI #
13AC8339
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Avnet Americas | Trans MOSFET N-CH 150V 55A 8-Pin TDSON EP - Product that comes on tape, but is not reeled (Alt: 13AC8339) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 7475 Partner Stock |
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$2.6600 / $3.9100 | Buy Now |
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DISTI #
726-BSC093N15NS5ATMA
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Mouser Electronics | MOSFET TRENCH >=100V RoHS: Compliant | 24980 |
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$1.7500 / $3.7600 | Buy Now |
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Future Electronics | Single N-Channel 150 V 9.3 mOhm 33 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 5000Reel |
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$1.0300 | Buy Now |
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Future Electronics | Single N-Channel 150 V 9.3 mOhm 33 nC OptiMOS™ Power Mosfet - TDSON-8 RoHS: Compliant pbFree: Yes Min Qty: 5000 Package Multiple: 5000 Container: Reel | 0Reel |
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$1.6000 | Buy Now |
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Bristol Electronics | 305 |
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RFQ | ||
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Ameya Holding Limited | 150v, 87A, 9.3 MOHM, PPAK SO-8 | 5000 |
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RFQ |
Part Details for BSC093N15NS5ATMA1
BSC093N15NS5ATMA1 CAD Models
BSC093N15NS5ATMA1 Part Data Attributes:
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BSC093N15NS5ATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC093N15NS5ATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 87A I(D), 150V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 87 A | |
| Drain-source On Resistance-Max | 0.0093 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 26 pF | |
| JESD-30 Code | R-PDSO-F8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 139 W | |
| Pulsed Drain Current-Max (IDM) | 348 A | |
| Reference Standard | IEC-68-1 | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |