Part Details for ARF476FL by Microsemi Corporation
Overview of ARF476FL by Microsemi Corporation
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Applications
Consumer Electronics
Audio and Video Systems
Renewable Energy
Part Details for ARF476FL
ARF476FL CAD Models
ARF476FL Part Data Attributes:
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ARF476FL
Microsemi Corporation
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Datasheet
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ARF476FL
Microsemi Corporation
RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Microsemi Corporation | |
Additional Feature | HIGH VOLTAGE | |
Configuration | COMMON SOURCE, 2 ELEMENTS | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 10 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
JESD-30 Code | R-XDFM-F8 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | UNSPECIFIED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |