Part Details for UT2311L-AE3-R by Unisonic Technologies Co Ltd
Overview of UT2311L-AE3-R by Unisonic Technologies Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (9 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for UT2311L-AE3-R
UT2311L-AE3-R CAD Models
UT2311L-AE3-R Part Data Attributes
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UT2311L-AE3-R
Unisonic Technologies Co Ltd
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Datasheet
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UT2311L-AE3-R
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 4A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | UNISONIC TECHNOLOGIES CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4 A | |
| Drain-source On Resistance-Max | 0.055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Element Material | SILICON |
Alternate Parts for UT2311L-AE3-R
This table gives cross-reference parts and alternative options found for UT2311L-AE3-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UT2311L-AE3-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRLML6402GPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | International Rectifier | UT2311L-AE3-R vs IRLML6402GPBF |
| IRLML6402PBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN AND LEAD FREE, MICRO-3 | International Rectifier | UT2311L-AE3-R vs IRLML6402PBF |
| IRLML6402 | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 | International Rectifier | UT2311L-AE3-R vs IRLML6402 |
| IRLML6402GTRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | UT2311L-AE3-R vs IRLML6402GTRPBF |
| IRLML6402TR | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, MICRO-3 | International Rectifier | UT2311L-AE3-R vs IRLML6402TR |
| BL3435 | Small Signal MOSFET; Channel Polarity: P channel; PD Max (W): 1.4W; V(BR)DSS Min (V): -20V; ID Max (A): -3.5A; RDS(ON) Max (Ω): 0.07 Ohm; ID (A): -3.5A; VGS (V): -4.5V; VGS Max (V): -1V; ID (mA): -250mA; GFS Min (S): 15 S; VDS (V): -5V; ID (A) 1: -3.5A; Package: SOT-23 | Galaxy Microelectronics | UT2311L-AE3-R vs BL3435 |
| IRLML6402TRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | Infineon Technologies AG | UT2311L-AE3-R vs IRLML6402TRPBF |
| UT2311G-AE3-R | Power Field-Effect Transistor, 4A I(D), 20V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE PACKAGE-3 | Unisonic Technologies Co Ltd | UT2311L-AE3-R vs UT2311G-AE3-R |
| IRLML6402TRPBF | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, MICRO-3 | International Rectifier | UT2311L-AE3-R vs IRLML6402TRPBF |