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Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
726-SPW47N60C3
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Mouser Electronics | MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 RoHS: Compliant | 3059 |
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$9.6900 / $15.0500 | Buy Now |
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Bristol Electronics | 605 |
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RFQ | ||
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Bristol Electronics | 20 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-247VAR | 2 |
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$19.0000 | Buy Now |
DISTI #
SPW47N60C3
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TME | Transistor: N-MOSFET, unipolar, 650V, 47A, 415W, PG-TO247-3 Min Qty: 1 | 23 |
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$14.2500 / $19.5800 | Buy Now |
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Ameya Holding Limited | Min Qty: 8 | 1214 |
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$23.8118 / $24.5473 | Buy Now |
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ComSIT USA | COOL MOS POWER TRANSISTOR Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC RoHS: Not Compliant | Europe - 250 |
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RFQ | |
DISTI #
TMOSP7030
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Rutronik | CoolMOS 600V 47A 70mOhm TO247 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube |
Stock DE - 1890 Stock HK - 0 Stock US - 0 Stock SG - 0 |
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$9.4200 / $12.2100 | Buy Now |
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LCSC | 650V 47A 70m10V30A 415W 3.9V2.7mA 1PCSNChannel TO-247AC-3 MOSFETs ROHS | 381 |
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$3.2162 / $5.6295 | Buy Now |
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MacroQuest Electronics | ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 | 2480 |
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$4.2900 / $7.8000 | Buy Now |
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SPW47N60C3
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
SPW47N60C3
Infineon Technologies AG
Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | TO-247AC | |
Package Description | GREEN, PLASTIC, TO-247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1800 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 47 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 415 W | |
Pulsed Drain Current-Max (IDM) | 141 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SPW47N60C3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SPW47N60C3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
RFP70N06 | N-Channel Power MOSFET 60V, 70A, 14mΩ, 800-TUBE | onsemi | SPW47N60C3 vs RFP70N06 |
RFP8P06LE | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, | Fairchild Semiconductor Corporation | SPW47N60C3 vs RFP8P06LE |
RFP2N12L | 2A, 120V, 1.75ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | SPW47N60C3 vs RFP2N12L |
RFP45N06_NL | 45A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | SPW47N60C3 vs RFP45N06_NL |
RFG70N06 | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | Harris Semiconductor | SPW47N60C3 vs RFG70N06 |
RFP70N06 | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | SPW47N60C3 vs RFP70N06 |
RFP15P06 | 15A, 60V, 0.15ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Intersil Corporation | SPW47N60C3 vs RFP15P06 |
RFP12N06RLE | Power Field-Effect Transistor, 12A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Harris Semiconductor | SPW47N60C3 vs RFP12N06RLE |
SPW47N60S5 | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | SPW47N60C3 vs SPW47N60S5 |
SMW70N06-14 | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Vishay Siliconix | SPW47N60C3 vs SMW70N06-14 |