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RF power transistor the LdmoST plastic family
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
98Y2308
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Newark | Rf Mosfet, N-Ch, 40V, Sot-89-3, Drain Source Voltage Vds:40V, Continuous Drain Current Id:2A, Power Dissipation Pd:6W, Operating Frequency Min:-, Operating Frequency Max:1Ghz, Rf Transistor Case:Sot-89, No. Of Pins:3Pins, Operating Rohs Compliant: Yes |Stmicroelectronics PD85004 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
56P9927
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Newark | N Channel Rf Powert Transistor, Ldmost, 40V, 2A, Sot-89, Drain Source Voltage Vds:40V, Continuous Drain Current Id:2A, Power Dissipation:6W, Operating Frequency Min:-, Operating Frequency Max:-, No. Of Pins:3Pins, Product Range:- Rohs Compliant: Yes |Stmicroelectronics PD85004 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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STMicroelectronics | RF power transistor the LdmoST plastic family RoHS: Compliant Min Qty: 1 | 0 |
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$2.5500 / $4.0600 | Buy Now |
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Future Electronics | N-Channel 40 V 4 W Surface Mount LDMOS RF Mosfet - SOT-89 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$1.9000 | Buy Now |
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Future Electronics | N-Channel 40 V 4 W Surface Mount LDMOS RF Mosfet - SOT-89 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$1.9000 | Buy Now |
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Future Electronics | N-Channel 40 V 4 W Surface Mount LDMOS RF Mosfet - SOT-89 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$1.9000 | Buy Now |
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PD85004
STMicroelectronics
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Datasheet
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PD85004
STMicroelectronics
RF power transistor the LdmoST plastic family
|
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 2 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PSSO-F3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 6 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |