Part Details for PD84002 by STMicroelectronics
Overview of PD84002 by STMicroelectronics
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for PD84002
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
06X0641
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Newark | Rf Fet Transistor, 25 V, 2 A, 6 W, 1 Ghz, Sot-89 Rohs Compliant: Yes |Stmicroelectronics PD84002 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$3.0200 / $4.1900 | Buy Now |
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STMicroelectronics | RF power transistor, the LdmoST plastic family RoHS: Compliant Min Qty: 1 | 0 |
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$2.5100 / $3.9900 | Buy Now |
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Future Electronics | Single N-Channel 25 V 6 W Silicon Mosfet - SOT-89 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$1.8700 | Buy Now |
Part Details for PD84002
PD84002 CAD Models
PD84002 Part Data Attributes:
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PD84002
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
PD84002
STMicroelectronics
RF power transistor, the LdmoST plastic family
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Package Description | ROHS COMPLIANT, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | STMicroelectronics | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 2 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
JESD-30 Code | R-PSSO-F3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 6 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | SILICON |
Alternate Parts for PD84002
This table gives cross-reference parts and alternative options found for PD84002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD84002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RD02MUS1B-101,T112 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10 | Mitsubishi Electric | PD84002 vs RD02MUS1B-101,T112 |
RD02MUS1B-101 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | Mitsubishi Electric | PD84002 vs RD02MUS1B-101 |
RD02MUS1-101 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | Mitsubishi Electric | PD84002 vs RD02MUS1-101 |
RD02MUS1-101,T112 | RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10 | Mitsubishi Electric | PD84002 vs RD02MUS1-101,T112 |