Datasheets
PD84002 by: STMicroelectronics

RF power transistor, the LdmoST plastic family

Part Details for PD84002 by STMicroelectronics

Overview of PD84002 by STMicroelectronics

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Price & Stock for PD84002

Part # Distributor Description Stock Price Buy
DISTI # 06X0641
Newark Rf Fet Transistor, 25 V, 2 A, 6 W, 1 Ghz, Sot-89 Rohs Compliant: Yes |Stmicroelectronics PD84002 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 0
  • 1 $4.1900
  • 10 $3.7900
  • 25 $3.6100
  • 50 $3.3900
  • 100 $3.1700
  • 250 $3.0200
$3.0200 / $4.1900 Buy Now
STMicroelectronics RF power transistor, the LdmoST plastic family RoHS: Compliant Min Qty: 1 0
  • 1 $3.9900
  • 10 $3.6000
  • 25 $3.4000
  • 100 $2.9500
  • 250 $2.9500
  • 500 $2.5100
$2.5100 / $3.9900 Buy Now
Future Electronics Single N-Channel 25 V 6 W Silicon Mosfet - SOT-89 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $1.8700
$1.8700 Buy Now

Part Details for PD84002

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PD84002 Part Data Attributes:

PD84002 STMicroelectronics
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PD84002 STMicroelectronics RF power transistor, the LdmoST plastic family
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS
Package Description ROHS COMPLIANT, PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 2 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PSSO-F3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for PD84002

This table gives cross-reference parts and alternative options found for PD84002. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD84002, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RD02MUS1B-101,T112 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10 Mitsubishi Electric PD84002 vs RD02MUS1B-101,T112
RD02MUS1B-101 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 Mitsubishi Electric PD84002 vs RD02MUS1B-101
RD02MUS1-101 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 Mitsubishi Electric PD84002 vs RD02MUS1-101
RD02MUS1-101,T112 RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-10 Mitsubishi Electric PD84002 vs RD02MUS1-101,T112

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