Datasheets
PD55025S-E by: STMicroelectronics

RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

Part Details for PD55025S-E by STMicroelectronics

Overview of PD55025S-E by STMicroelectronics

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Applications Space Technology Aerospace and Defense Transportation and Logistics Renewable Energy Automotive Robotics and Drones

Price & Stock for PD55025S-E

Part # Distributor Description Stock Price Buy
DISTI # 07AH6876
Newark Rf Fet, N-Ch, 40V, 7A, Powerso-10Rf, Drain Source Voltage Vds:40V, Continuous Drain Current Id:7A, Power Dissipation Pd:79W, Operating Frequency Min:-, Operating Frequency Max:1Ghz, Rf Transistor Case:Powerso-10Rf, No. Of Pins:-, Rohs Compliant: Yes |Stmicroelectronics PD55025S-E Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 103
  • 1 $32.7100
  • 5 $31.4300
  • 10 $30.1500
  • 25 $28.8000
  • 50 $27.2700
  • 100 $25.7400
  • 250 $24.5500
$24.5500 / $32.7100 Buy Now
DISTI # 56P9893
Newark N Channel Rf Power Transistor, Ldmost, 40V, 7A, Power So-10, Drain Source Voltage Vds:40V, Continuous Drain Current Id:7A, Power Dissipation:79W, Operating Frequency Min:-, Operating Frequency Max:-, No. Of Pins:10Pins Rohs Compliant: Yes |Stmicroelectronics PD55025S-E Min Qty: 400 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 25 $28.2400
$28.2400 Buy Now
DISTI # 497-5302-5-ND
DigiKey RF MOSFET LDMOS 12.5V PWRSO-10RF Min Qty: 1 Lead time: 23 Weeks Container: Tube 339
In Stock
  • 1 $29.9500
  • 10 $27.6270
  • 50 $26.3852
  • 100 $23.5914
  • 250 $22.5050
$22.5050 / $29.9500 Buy Now
DISTI # PD55025S-E
Avnet Americas Transistor RF FET N-CH 40V 7A 500MHz 3-Pin PowerSO-10RF Tube - Bag (Alt: PD55025S-E) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks, 0 Days Container: Bag 0
  • 400 $22.8200
  • 800 $22.3590
  • 1,600 $21.8980
  • 2,400 $21.4370
  • 3,200 $20.9760
  • 4,000 $20.5149
  • 40,000 $20.0539
$20.0539 / $22.8200 Buy Now
DISTI # 511-PD55025S-E
Mouser Electronics RF MOSFET Transistors POWER RF Transistor RoHS: Compliant 262
  • 1 $29.9500
  • 10 $27.6100
  • 25 $26.3700
  • 100 $23.5700
  • 250 $22.4900
$22.4900 / $29.9500 Buy Now
STMicroelectronics RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs RoHS: Compliant Min Qty: 1 262
  • 1 $29.3500
  • 10 $27.0600
  • 25 $25.8400
  • 100 $23.1000
  • 250 $22.0400
  • 400 $21.5700
$21.5700 / $29.3500 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 400 Package Multiple: 400 Lead time: 23 Weeks 0
  • 400 $18.7500
$18.7500 Buy Now
DISTI # PD55025S-E
TME Transistor: N-MOSFET, unipolar, RF, 40V, 7A, 79W, PowerSO10RF, SMT Min Qty: 1 0
  • 1 $40.9000
  • 5 $36.7600
  • 25 $32.5200
  • 100 $29.2600
  • 500 $27.3000
$27.3000 / $40.9000 RFQ
DISTI # PD55025S-E
Avnet Silica Transistor RF FET N-CH 40V 7A 500MHz 3-Pin PowerSO-10RF Tube (Alt: PD55025S-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 17 Weeks, 0 Days Silica - 250
Buy Now
DISTI # PD55025S-E
EBV Elektronik Transistor RF FET N-CH 40V 7A 500MHz 3-Pin PowerSO-10RF Tube (Alt: PD55025S-E) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 24 Weeks, 0 Days EBV - 0
Buy Now

Part Details for PD55025S-E

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PD55025S-E Part Data Attributes

PD55025S-E STMicroelectronics
Buy Now Datasheet
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PD55025S-E STMicroelectronics RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS
Part Package Code SOT
Package Description ROHS COMPLIANT, PLASTIC, POWERSO-10RF, 2 PIN
Pin Count 10
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 23 Weeks
Samacsys Manufacturer STMicroelectronics
Additional Feature HIGH RELIABILITY
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 7 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-PDSO-F2
JESD-609 Code e3
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 165 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 79 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for PD55025S-E

This table gives cross-reference parts and alternative options found for PD55025S-E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PD55025S-E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PD55025TR-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs STMicroelectronics PD55025S-E vs PD55025TR-E
PD55025-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs STMicroelectronics PD55025S-E vs PD55025-E

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