Part Details for NSVBCH817-16LT1G by onsemi
Overview of NSVBCH817-16LT1G by onsemi
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for NSVBCH817-16LT1G
NSVBCH817-16LT1G CAD Models
NSVBCH817-16LT1G Part Data Attributes
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NSVBCH817-16LT1G
onsemi
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Datasheet
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NSVBCH817-16LT1G
onsemi
Small Signal Bipolar Transistor
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Date Of Intro | 2020-02-18 | |
Collector Current-Max (IC) | 0.5 A | |
Collector-Emitter Voltage-Max | 45 V | |
Configuration | SINGLE | |
DC Current Gain-Min (hFE) | 100 | |
JEDEC-95 Code | TO-236 | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | NPN | |
Power Dissipation-Max (Abs) | 0.3 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Element Material | SILICON | |
Transition Frequency-Nom (fT) | 100 MHz | |
VCEsat-Max | 0.7 V |
Alternate Parts for NSVBCH817-16LT1G
This table gives cross-reference parts and alternative options found for NSVBCH817-16LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of NSVBCH817-16LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BCX19 | General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 45V; IC (A): 0.5A; HFE Min: 100; HFE Max: 600; VCE (V): 1V; IC (mA): 100mA; VCE(SAT) (V): 0.62V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): - MHz; PTM Max (W): 0.3W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23 | Galaxy Microelectronics | NSVBCH817-16LT1G vs BCX19 |
BCH817-16LT1G | Small Signal Bipolar Transistor | onsemi | NSVBCH817-16LT1G vs BCH817-16LT1G |
BC817-16W | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, | Galaxy Microelectronics | NSVBCH817-16LT1G vs BC817-16W |
BC817-16-D0RFG | Small Signal Bipolar Transistor | Taiwan Semiconductor | NSVBCH817-16LT1G vs BC817-16-D0RFG |
BC817-16HF | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, | Yangzhou Yangjie Electronics Co Ltd | NSVBCH817-16LT1G vs BC817-16HF |
BC817-16 | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, | Galaxy Microelectronics | NSVBCH817-16LT1G vs BC817-16 |
BC817-16 | Transistor | Taiwan Semiconductor | NSVBCH817-16LT1G vs BC817-16 |
BC817-40W-QF | BC817W-Q series - 45 V, 500 mA NPN general-purpose transistors@en-us SC-70 3-Pin | Nexperia | NSVBCH817-16LT1G vs BC817-40W-QF |
BC817-16-QVL | BC817-Q series - 45 V, 500 mA NPN general-purpose transistors@en-us TO-236 3-Pin | Nexperia | NSVBCH817-16LT1G vs BC817-16-QVL |
BC817K-16WH6327 | Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT PACKAGE-3 | Infineon Technologies AG | NSVBCH817-16LT1G vs BC817K-16WH6327 |