-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
GaAs pHEMT Power FET, 3.5 GHz, 3 W , 6 V
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
MRFG35003N6AT1
Freescale Semiconductor
Buy Now
Datasheet
|
Compare Parts:
MRFG35003N6AT1
Freescale Semiconductor
GaAs pHEMT Power FET, 3.5 GHz, 3 W , 6 V
|
Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FREESCALE SEMICONDUCTOR INC | |
Package Description | ROHS COMPLIANT, PLASTIC, PLD-1.5, CASE 466-03, 4 PIN | |
Pin Count | 4 | |
Manufacturer Package Code | CASE 466-03 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Samacsys Manufacturer | NXP | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 8 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | C BAND | |
JESD-30 Code | R-PQSO-N4 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 3 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | DEPLETION MODE | |
Operating Temperature-Max | 85 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | QUAD | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |