Part Details for LBSS123LT3G by LRC Leshan Radio Co Ltd
Overview of LBSS123LT3G by LRC Leshan Radio Co Ltd
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Security and Surveillance
Space Technology
Internet of Things (IoT)
Environmental Monitoring
Smart Cities
Aerospace and Defense
Healthcare
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Medical Imaging
Robotics and Drones
Part Details for LBSS123LT3G
LBSS123LT3G CAD Models
LBSS123LT3G Part Data Attributes:
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LBSS123LT3G
LRC Leshan Radio Co Ltd
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Datasheet
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LBSS123LT3G
LRC Leshan Radio Co Ltd
Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Package Description | SMALL OUTLINE, R-PDSO-G3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 0.17 A | |
| Drain-source On Resistance-Max | 6 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.225 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for LBSS123LT3G
This table gives cross-reference parts and alternative options found for LBSS123LT3G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of LBSS123LT3G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2N7002T7-7 | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Diodes Incorporated | LBSS123LT3G vs 2N7002T7-7 |
| TP4859 | Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-226AA | Allegro MicroSystems LLC | LBSS123LT3G vs TP4859 |
| BST70A | TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal | NXP Semiconductors | LBSS123LT3G vs BST70A |
| SI1031R-T1-GE3 | Small Signal Field-Effect Transistor, 0.14A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-75A, 3 PIN | Vishay Intertechnologies | LBSS123LT3G vs SI1031R-T1-GE3 |
| 2SK940 | TRANSISTOR 800 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92MOD, 3 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | LBSS123LT3G vs 2SK940 |
| VN10LPSTOB | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3 | Diodes Incorporated | LBSS123LT3G vs VN10LPSTOB |
| 2SK303-3-TA | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236 | SANYO Electric Co Ltd | LBSS123LT3G vs 2SK303-3-TA |
| ZVP3306AM1 | Small Signal Field-Effect Transistor, 0.16A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, E-LINE PACKAGE-3 | Diodes Incorporated | LBSS123LT3G vs ZVP3306AM1 |
| PN4393-J22Z | TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, PLASTIC PACKAGE-3, FET General Purpose Small Signal | National Semiconductor Corporation | LBSS123LT3G vs PN4393-J22Z |
| 2SK303-15-TB | Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-236 | SANYO Electric Co Ltd | LBSS123LT3G vs 2SK303-15-TB |