Infineon Technologies AG |
Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, MODIFIED TO-39, 3 PIN |
$15.9200 / $16.7100
|
|
View Details |
International Rectifier |
Power Field-Effect Transistor, 6A I(D), 100V, 0.345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
$3.4100 / $33.0000
|
|
View Details |
HARTING Technology Group |
|
|
|
View Details |
Vishay Siliconix |
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
$9.0000 / $12.0000
|
|
View Details |
Harris Semiconductor |
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
$21.4500 / $33.0000
|
|
View Details |
General Electric Company |
MOSFET Transistor, N-Channel, TO-39 |
$31.2000
|
|
View Details |
Defense Logistics Agency |
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
|
|
View Details |
Semicoa Semiconductors |
Power Field-Effect Transistor, 6A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
|
|
View Details |
Microsemi Corporation |
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, |
|
|
View Details |
Rochester Electronics LLC |
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
|
|
View Details |
Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
|
|
View Details |
Intersil Corporation |
6A, 100V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
|
|
View Details |