Datasheets
IS43QR16512A-075VBLI by: Integrated Silicon Solution Inc

DDR DRAM,

Part Details for IS43QR16512A-075VBLI by Integrated Silicon Solution Inc

Overview of IS43QR16512A-075VBLI by Integrated Silicon Solution Inc

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Price & Stock for IS43QR16512A-075VBLI

Part # Distributor Description Stock Price Buy
DISTI # 14AK4803
Newark 8G, 1.2V, Ddr4, 512Mx16, 2666Mt/S @ 19-19-19, 96 Ball Bga (10Mm X14Mm) Rohs, It |Integrated Silicon Solution (Issi) IS43QR16512A-075VBLI Min Qty: 136 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $16.5000
  • 250 $16.0200
$16.0200 / $16.5000 Buy Now
DISTI # 706-IS43QR16512A-075VBLI-ND
DigiKey 8G, 1.2V, DDR4, 512Mx16, 2666MT/ Min Qty: 136 Lead time: 10 Weeks Container: Bulk Temporarily Out of Stock
  • 136 $15.5437
$15.5437 Buy Now
DISTI # IS43QR16512A-075VB
Avnet Americas DRAM Chip DDR4 SDRAM 8Gbit 512M x 16 1.2V 96-Pin TWBGA - Trays (Alt: IS43QR16512A-075VB) RoHS: Not Compliant Min Qty: 136 Package Multiple: 136 Lead time: 10 Weeks, 0 Days Container: Tray 0
  • 136 $18.0234
  • 272 $17.5522
  • 544 $16.7276
  • 816 $16.2564
  • 1,088 $15.6674
  • 1,360 $15.1962
  • 13,600 $14.7250
$14.7250 / $18.0234 Buy Now
DISTI # 870-3QR16512A075VBLI
Mouser Electronics DRAM 8G, 1.2V, DDR4, 512Mx16, 2666MT/s a. 19-19-19, 96 ball BGA (10mm x14mm) RoHS, IT RoHS: Compliant 74
  • 1 $21.4500
  • 10 $19.9800
  • 25 $19.7700
  • 50 $19.2800
  • 100 $16.9300
  • 272 $16.3500
$16.3500 / $21.4500 Buy Now
DISTI # IS43QR16512A-075VB
Avnet Americas DRAM Chip DDR4 SDRAM 8Gbit 512M x 16 1.2V 96-Pin TWBGA - Trays (Alt: IS43QR16512A-075VB) RoHS: Not Compliant Min Qty: 136 Package Multiple: 136 Lead time: 10 Weeks, 0 Days Container: Tray 0
  • 136 $18.0234
  • 272 $17.5522
  • 544 $16.7276
  • 816 $16.2564
  • 1,088 $15.6674
  • 1,360 $15.1962
  • 13,600 $14.7250
$14.7250 / $18.0234 Buy Now
DISTI # IS43QR16512A-075VBLI
Avnet Asia DRAM Chip DDR4 SDRAM 8Gbit 512M x 16 1.2V 96-Pin TWBGA (Alt: IS43QR16512A-075VBLI) RoHS: Compliant Min Qty: 136 Package Multiple: 136 Lead time: 14 Weeks, 0 Days 0
RFQ
DISTI # IS43QR16512A-075VBLI
Avnet Silica DRAM Chip DDR4 SDRAM 8Gbit 512M x 16 1.2V 96-Pin TWBGA (Alt: IS43QR16512A-075VBLI) RoHS: Compliant Min Qty: 136 Package Multiple: 136 Lead time: 28 Weeks, 0 Days Silica - 0
Buy Now

Part Details for IS43QR16512A-075VBLI

IS43QR16512A-075VBLI CAD Models

IS43QR16512A-075VBLI Part Data Attributes:

IS43QR16512A-075VBLI Integrated Silicon Solution Inc
Buy Now Datasheet
Compare Parts:
IS43QR16512A-075VBLI Integrated Silicon Solution Inc DDR DRAM,
Part Life Cycle Code Active
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8542.32.00.36
Factory Lead Time 10 Weeks
Date Of Intro 2020-06-23
Samacsys Manufacturer Integrated Silicon Solution Inc.
Access Mode MULTI BANK PAGE BURST
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 1333 MHz
I/O Type COMMON
Interleaved Burst Length 4,8
JESD-30 Code R-PBGA-B96
JESD-609 Code e1
Length 14 mm
Memory Density 8589934592 bit
Memory IC Type DDR4 DRAM
Memory Width 16
Moisture Sensitivity Level 1
Number of Functions 1
Number of Ports 1
Number of Terminals 96
Number of Words 536870912 words
Number of Words Code 512000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 95 °C
Operating Temperature-Min -40 °C
Organization 512MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA96,9X16,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 4,8
Standby Current-Max 0.025 A
Supply Current-Max 0.375 mA
Supply Voltage-Max (Vsup) 1.26 V
Supply Voltage-Min (Vsup) 1.14 V
Supply Voltage-Nom (Vsup) 1.2 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Width 10 mm

Alternate Parts for IS43QR16512A-075VBLI

This table gives cross-reference parts and alternative options found for IS43QR16512A-075VBLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS43QR16512A-075VBLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS43QR16512A-075VBL DDR DRAM, Integrated Silicon Solution Inc IS43QR16512A-075VBLI vs IS43QR16512A-075VBL
Part Number Description Manufacturer Compare
NT5AD512M16C4-HRI DRAM, Nanya Technology Corporation IS43QR16512A-075VBLI vs NT5AD512M16C4-HRI
IS43QR16512A-075VBL DDR DRAM, Integrated Silicon Solution Inc IS43QR16512A-075VBLI vs IS43QR16512A-075VBL
MT40A512M16TB-062E:J DDR4 DRAM, 512MX16, CMOS, PBGA96, Micron Technology Inc IS43QR16512A-075VBLI vs MT40A512M16TB-062E:J
K4A8G165WB-BIRC0 DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Samsung Semiconductor IS43QR16512A-075VBLI vs K4A8G165WB-BIRC0
NT5AD512M16C4-HR DRAM, Nanya Technology Corporation IS43QR16512A-075VBLI vs NT5AD512M16C4-HR
K4A8G165WB-BCRC DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Samsung Semiconductor IS43QR16512A-075VBLI vs K4A8G165WB-BCRC
MT40A512M16LY-062EAAT:E 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc IS43QR16512A-075VBLI vs MT40A512M16LY-062EAAT:E
MT40A512M16LY-062EAUT:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc IS43QR16512A-075VBLI vs MT40A512M16LY-062EAUT:E
MT40A512M16LY-062EIT:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc IS43QR16512A-075VBLI vs MT40A512M16LY-062EIT:E
MT40A512M16LY-062E:E DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 Micron Technology Inc IS43QR16512A-075VBLI vs MT40A512M16LY-062E:E

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