Datasheets
IS42S16800E-6BLI by: Integrated Silicon Solution Inc

Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54

Part Details for IS42S16800E-6BLI by Integrated Silicon Solution Inc

Overview of IS42S16800E-6BLI by Integrated Silicon Solution Inc

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Applications Consumer Electronics Internet of Things (IoT) Industrial Automation Computing and Data Storage Renewable Energy Entertainment and Gaming Robotics and Drones

Part Details for IS42S16800E-6BLI

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IS42S16800E-6BLI Part Data Attributes:

IS42S16800E-6BLI Integrated Silicon Solution Inc
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IS42S16800E-6BLI Integrated Silicon Solution Inc Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTEGRATED SILICON SOLUTION INC
Part Package Code BGA
Package Description TFBGA, BGA54,9X9,32
Pin Count 54
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8542.32.00.02
Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4 ns
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166 MHz
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code S-PBGA-B54
JESD-609 Code e1
Length 8 mm
Memory Density 134217728 bit
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 8388608 words
Number of Words Code 8000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C
Organization 8MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TFBGA
Package Equivalence Code BGA54,9X9,32
Package Shape SQUARE
Package Style GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2 mm
Self Refresh YES
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002 A
Supply Current-Max 0.18 mA
Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 3 V
Supply Voltage-Nom (Vsup) 3.3 V
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL
Terminal Pitch 0.8 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 10
Width 8 mm

Alternate Parts for IS42S16800E-6BLI

This table gives cross-reference parts and alternative options found for IS42S16800E-6BLI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IS42S16800E-6BLI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
HY5V26FFP-6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc IS42S16800E-6BLI vs HY5V26FFP-6I
HY5V26EFP-6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc IS42S16800E-6BLI vs HY5V26EFP-6I
IS42S16800F-6BLI Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, TFBGA-54 Integrated Silicon Solution Inc IS42S16800E-6BLI vs IS42S16800F-6BLI
IS42S16800-6BLI Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, LEAD FREE, BGA-54 Integrated Silicon Solution Inc IS42S16800E-6BLI vs IS42S16800-6BLI
HY5V26FF-6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc IS42S16800E-6BLI vs HY5V26FF-6I
HY5V26EF-6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc IS42S16800E-6BLI vs HY5V26EF-6I
Part Number Description Manufacturer Compare
HY5V26CSF-6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8.30 X 10.50 MM, 0.80 MM PITCH, FBGA-54 SK Hynix Inc IS42S16800E-6BLI vs HY5V26CSF-6I
V54C3128164VCUK75IPC Synchronous DRAM, 8MX16, CMOS, PBGA54, GREEN, MO-207, FBGA-54 ProMOS Technologies Inc IS42S16800E-6BLI vs V54C3128164VCUK75IPC
MT48LC8M16LFF4-75MXT Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54 Micron Technology Inc IS42S16800E-6BLI vs MT48LC8M16LFF4-75MXT
V54C3128164VCLC7 Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, FBGA-54 ProMOS Technologies Inc IS42S16800E-6BLI vs V54C3128164VCLC7
VG36128161BF-7H Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 10 X 9 MM, VFBGA-54 Vanguard International Semiconductor Corporation IS42S16800E-6BLI vs VG36128161BF-7H
HY5V26FFP-6I Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, 0.80 MM PITCH, LEAD FREE, FBGA-54 SK Hynix Inc IS42S16800E-6BLI vs HY5V26FFP-6I
VG36128161BFL-7L Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 10 X 9 MM, VFBGA-54 Vanguard International Semiconductor Corporation IS42S16800E-6BLI vs VG36128161BFL-7L
MT48LC8M16A2F4-75:G Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, 8 X 8 MM, VFBGA-54 Micron Technology Inc IS42S16800E-6BLI vs MT48LC8M16A2F4-75:G
V54C3128164VCLK75HPC Synchronous DRAM, 8MX16, CMOS, PBGA54, GREEN, MO-207, FBGA-54 ProMOS Technologies Inc IS42S16800E-6BLI vs V54C3128164VCLK75HPC
V54C3128164VCUK75EPC Synchronous DRAM, 8MX16, CMOS, PBGA54, GREEN, MO-207, FBGA-54 ProMOS Technologies Inc IS42S16800E-6BLI vs V54C3128164VCUK75EPC

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