Manufacturer | Description | Price Range | Set Alert | Details |
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International Rectifier | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN |
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TT Electronics Resistors | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN |
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TT Electronics Power and Hybrid / Semelab Limited | 9.4A, 200V, 0.51ohm, P-CHANNEL, Si, POWER, MOSFET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN |
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Infineon Technologies AG | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.51ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN |
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