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Power Field-Effect Transistor, 10A I(D), 150V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, ROHS COMPLIANT AND HALOGEN FREE, PLASTIC, QFN-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
65R4957
|
Newark | Mosfet Transistor, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:56A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:3.6W Rohs Compliant: Yes |Infineon IRFH5015TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.7870 / $0.8010 | Buy Now |
DISTI #
65R4956
|
Newark | Mosfet Transistor, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:56A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:3.6W Rohs Compliant: Yes |Infineon IRFH5015TRPBF Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.8480 / $1.8800 | Buy Now |
DISTI #
IRFH5015TRPBFCT-ND
|
DigiKey | MOSFET N-CH 150V 10A/56A 8PQFN Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
8202 In Stock |
|
$0.7578 / $1.8100 | Buy Now |
DISTI #
IRFH5015TRPBF
|
Avnet Americas | Trans MOSFET N-CH 150V 10A 8-Pin PQFN T/R - Tape and Reel (Alt: IRFH5015TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.7073 / $0.8083 | Buy Now |
DISTI #
942-IRFH5015TRPBF
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Mouser Electronics | MOSFET 150V SINGLE N-CH 31mOhms 33nC RoHS: Compliant | 302 |
|
$0.7680 / $1.5600 | Buy Now |
DISTI #
V72:2272_13890383
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Arrow Electronics | Trans MOSFET N-CH 150V 10A 8-Pin PQFN EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2228 Container: Cut Strips | Americas - 2160 |
|
$0.6558 / $0.9552 | Buy Now |
DISTI #
70019245
|
RS | MOSFET, N-Channel, 150V, 56A, 31 mOhm, 33 nC Qg, PQFN | Infineon IRFH5015TRPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
|
$1.2500 / $1.5600 | RFQ |
|
Future Electronics | Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel | 4000Reel |
|
$0.5200 | Buy Now |
|
Future Electronics | Single N-Channel 150 V 31 mOhm 54 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$0.8300 / $0.8600 | Buy Now |
DISTI #
75723620
|
Verical | Trans MOSFET N-CH 150V 10A 8-Pin PQFN EP T/R Min Qty: 33 Package Multiple: 1 Date Code: 2329 | Americas - 4000 |
|
$0.7813 / $0.9513 | Buy Now |
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IRFH5015TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFH5015TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 150V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, ROHS COMPLIANT AND HALOGEN FREE, PLASTIC, QFN-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-N5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 230 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.031 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 250 W | |
Pulsed Drain Current-Max (IDM) | 220 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFH5015TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFH5015TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFH5015TRPBF | Power Field-Effect Transistor, 10A I(D), 150V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, ROHS COMPLIANT AND HALOGEN FREE, PLASTIC, QFN-8 | International Rectifier | IRFH5015TRPBF vs IRFH5015TRPBF |