Infineon Technologies AG |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
$13.2000
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New Jersey Semiconductor Products, Inc. |
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$15.7440 / $19.2000
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New Jersey Semiconductor Products Inc |
MOSFET Transistor, N-Channel, TO-205AF |
$16.0000 / $20.8000
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TT Electronics Resistors |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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Intersil Corporation |
2.2A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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TT Electronics Power and Hybrid / Semelab Limited |
2.25A, 200V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN |
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Rochester Electronics LLC |
2.25A, 200V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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General Electric Solid State |
Transistor |
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Fairchild Semiconductor Corporation |
Power Field-Effect Transistor, 2.2A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, |
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Thomson Consumer Electronics |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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Freescale Semiconductor |
TRANSISTOR,MOSFET,N-CHANNEL,200V V(BR)DSS,2.25A I(D),TO-205AF |
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International Rectifier |
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN |
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Harris Semiconductor |
Power Field-Effect Transistor, 2.2A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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Vishay Siliconix |
Power Field-Effect Transistor, 2.2A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205 |
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Motorola Semiconductor Products |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
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