Datasheets
IRF542 by:

Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for IRF542 by International Rectifier

Overview of IRF542 by International Rectifier

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Part Details for IRF542

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IRF542 Part Data Attributes:

IRF542 International Rectifier
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IRF542 International Rectifier Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 25 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRF542

This table gives cross-reference parts and alternative options found for IRF542. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF542, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF540-001 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF542 vs IRF540-001
IRF540 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF542 vs IRF540
IRF540 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF542 vs IRF540
IRF542 POWER, FET National Semiconductor Corporation IRF542 vs IRF542
IRF540-009 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF542 vs IRF540-009
IRF542 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF542 vs IRF542
IRF540 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRF542 vs IRF540
934055542127 TRANSISTOR 23 A, 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRF542 vs 934055542127
IRF542 25A, 100V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRF542 vs IRF542
IRF542 24A, 100V, 0.11ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF542 vs IRF542
Part Number Description Manufacturer Compare
IRF540-009 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF542 vs IRF540-009
IRF540PBF Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 Vishay Intertechnologies IRF542 vs IRF540PBF
MTP25N06 25A, 60V, 0.08ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF542 vs MTP25N06
NTB6412ANT4G Power MOSFET 100V 58A 18.2 mohm Single N-Channel D2PAK, D2PAK 2 LEAD, 800-REEL onsemi IRF542 vs NTB6412ANT4G
IRF541-001 Power Field-Effect Transistor, 28A I(D), 80V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET International Rectifier IRF542 vs IRF541-001
IRF540 Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Vishay Intertechnologies IRF542 vs IRF540
MTB33N10ET4 33A, 100V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 418B-03, D2PAK-3 onsemi IRF542 vs MTB33N10ET4
2SK1928 TRANSISTOR 27 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220FL, TO-220FL, 3 PIN, FET General Purpose Power Toshiba America Electronic Components IRF542 vs 2SK1928
IRF543 Power Field-Effect Transistor, 25A I(D), 80V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Harris Semiconductor IRF542 vs IRF543
IRF540 28A, 100V, 0.077ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF542 vs IRF540

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