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Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19K8212
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Newark | N Channel Mosfet, 100V, 6.5A D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:33A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF540NSTRRPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 291 |
|
$0.5460 | Buy Now |
DISTI #
70017460
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 44 Milliohms, ID 33A, D2Pak, PD 130W, VGS+/-20V | Infineon IRF540NSTRRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.8400 / $0.9800 | RFQ |
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Ameya Holding Limited | Single N-Channel 100 V 44 mOhm 71nC HEXFET® Power Mosfet - D2PAK | 2978 |
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RFQ | |
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CHIPMALL.COM LIMITED | MOSFET N-CH 100V 33A D2PAK | 5507 |
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$0.5498 / $1.0674 | Buy Now |
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CHIPMALL.COM LIMITED | MOSFET N-CH 100V 33A D2PAK | 244 |
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$0.8927 | Buy Now |
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Win Source Electronics | MOSFET N-CH 100V 33A D2PAK | 455550 |
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$0.2830 / $0.4240 | Buy Now |
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IRF540NSTRRPBF
Infineon Technologies AG
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Datasheet
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IRF540NSTRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 1996-04-01 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 185 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.044 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 130 W | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRF540NSTRRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSTRRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRF540NSTRLPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRRPBF vs IRF540NSTRLPBF |
IRF540NSPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF540NSTRRPBF vs IRF540NSPBF |
IRF540NSTRR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRRPBF vs IRF540NSTRR |
IRF540NSPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRRPBF vs IRF540NSPBF |
IRF540NSTRRPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRRPBF vs IRF540NSTRRPBF |