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100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
29AH3845
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Newark | Mosfet, N Channel, 100V, 100A, Son-8, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:100V, On Resistance Rds(On):0.0053Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.7V, Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD19531Q5A Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$1.6500 / $2.1300 | Buy Now |
DISTI #
296-41232-1-ND
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DigiKey | MOSFET N-CH 100V 100A 8VSON Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4232 In Stock |
|
$0.7125 / $1.7000 | Buy Now |
DISTI #
595-CSD19531Q5A
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Mouser Electronics | MOSFET 100V 5.3mOhm Pwr MOSFET RoHS: Compliant | 1225 |
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$0.7160 / $1.7000 | Buy Now |
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Ameya Holding Limited | MOSFET N-CH 100V 100A 8SON | 21510 |
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RFQ | |
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Win Source Electronics | MOSFET N-CH 100V 100A 8VSON / N-Channel 100 V 100A (Tc) 3.3W (Ta), 125W (Tc) Surface Mount 8-VSONP (5x6) | 78800 |
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$1.6960 / $2.5440 | Buy Now |
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CSD19531Q5A
Texas Instruments
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Datasheet
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CSD19531Q5A
Texas Instruments
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150
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Pbfree Code | Yes | |
Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | ROHS COMPLIANT, PLASTIC, VSON-8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 180 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 110 A | |
Drain-source On Resistance-Max | 0.0078 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 16.9 pF | |
JESD-30 Code | R-PDSO-N8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 337 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for CSD19531Q5A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CSD19531Q5A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
CSD19531Q5AT | 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150 | Texas Instruments | CSD19531Q5A vs CSD19531Q5AT |