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Transistors / RF Power Field-Effect Transistors / AFT09MS007NT1
Datasheets
AFT09MS007NT1 by:

RF POWER, FET

Part Details for AFT09MS007NT1 by NXP Semiconductors

Overview of AFT09MS007NT1 by NXP Semiconductors

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Price & Stock for AFT09MS007NT1

Part # Distributor Description Stock Price Buy
DISTI # 31AC6117
Newark Transistor, Rf, 30V, Pld-1.5W-2, Drain Source Voltage Vds:30Vdc, Continuous Drain Current Id:-, Power Dissipation Pd:114W, Operating Frequency Min:136Mhz, Operating Frequency Max:941Mhz, Rf Transistor Case:Pld-1.5W, No. Of Rohs Compliant: Yes |Nxp AFT09MS007NT1 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1188
  • 1 $4.8000
  • 10 $4.0400
  • 25 $3.8100
  • 50 $3.5400
  • 100 $3.2700
  • 250 $3.0800
  • 500 $2.9000
  • 1,000 $2.4900
$2.4900 / $4.8000 Buy Now
DISTI # AFT09MS007NT1CT-ND
DigiKey RF MOSFET LDMOS 7.5V PLD-1.5W Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 4422
In Stock
  • 1 $4.6300
  • 10 $4.1570
  • 25 $3.9296
  • 100 $3.4057
  • 250 $3.2310
  • 500 $2.8992
  • 1,000 $2.4451
  • 2,000 $2.3228
$2.3228 / $4.6300 Buy Now
DISTI # AFT09MS007NT1
Avnet Americas Transistor RF FET N-CH 30V 1.8MHz to 941MHz 3-Pin PLD-1.5W T/R - Tape and Reel (Alt: AFT09MS007NT1) RoHS: Compliant Min Qty: 2000 Package Multiple: 1000 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 2,000 $2.4209
  • 4,000 $2.3690
  • 6,000 $2.3171
  • 10,000 $2.2652
  • 20,000 $2.2134
  • 100,000 $2.1615
  • 200,000 $2.1096
$2.1096 / $2.4209 Buy Now
DISTI # 841-AFT09MS007NT1
Mouser Electronics RF MOSFET Transistors LANDMOBILE 7W PLD1.5W RoHS: Compliant 8960
  • 1 $4.6200
  • 10 $3.8800
  • 25 $3.6600
  • 100 $3.1400
  • 250 $2.9600
  • 500 $2.7900
  • 1,000 $2.3900
  • 2,000 $2.2500
$2.2500 / $4.6200 Buy Now
Future Electronics AFT09MSx Series 30 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2 RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $2.3500
$2.3500 Buy Now
Future Electronics AFT09MSx Series 30 V 870 MHz N-Channel RF Power LDMOS Transistor - PLD-1.5W-2 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 1000 Container: Reel 0
Reel
  • 1,000 $2.3500
$2.3500 Buy Now
Chip 1 Exchange INSTOCK 17965
RFQ
DISTI # AFT09MS007NT1
Avnet Silica Transistor RF FET N-CH 30V 1.8MHz to 941MHz 3-Pin PLD-1.5W T/R (Alt: AFT09MS007NT1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # AFT09MS007NT1
EBV Elektronik Transistor RF FET N-CH 30V 1.8MHz to 941MHz 3-Pin PLD-1.5W T/R (Alt: AFT09MS007NT1) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days EBV - 2000
Buy Now

Part Details for AFT09MS007NT1

AFT09MS007NT1 Part Data Attributes:

Parametric Data
AFT09MS007NT1 NXP Semiconductors
Buy Now Datasheet
Compare Parts:
AFT09MS007NT1 NXP Semiconductors RF POWER, FET
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer NXP SEMICONDUCTORS
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00
Factory Lead Time 10 Weeks
Samacsys Manufacturer NXP
Configuration SINGLE
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3
Moisture Sensitivity Level 3
Number of Elements 1
Operating Temperature-Max 150 °C
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 182 W
Surface Mount YES
Terminal Finish Tin (Sn)
Time@Peak Reflow Temperature-Max (s) 40

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