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5KP190C by:

Trans Voltage Suppressor Diode,

Part Details for 5KP190C by Galaxy Microelectronics

Overview of 5KP190C by Galaxy Microelectronics

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Applications Industrial Automation

Part Details for 5KP190C

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5KP190C Part Data Attributes:

5KP190C Galaxy Microelectronics
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5KP190C Galaxy Microelectronics Trans Voltage Suppressor Diode,
Part Life Cycle Code Active
Ihs Manufacturer CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY, PRSM-MIN
Breakdown Voltage-Max 255 V
Breakdown Voltage-Min 211 V
Breakdown Voltage-Nom 233 V
Case Connection ISOLATED
Clamping Voltage-Max 341 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-PALF-W2
Non-rep Peak Rev Power Dis-Max 5000 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL
Power Dissipation-Max 8 W
Rep Pk Reverse Voltage-Max 190 V
Reverse Current-Max 10 µA
Reverse Test Voltage 190 V
Surface Mount NO
Technology AVALANCHE
Terminal Form WIRE
Terminal Position AXIAL

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