Part Details for 2N7002H6327 by Infineon Technologies AG
Overview of 2N7002H6327 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for 2N7002H6327
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 15000 |
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RFQ | ||
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Quest Components | 12000 |
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$0.0560 / $0.2800 | Buy Now | |
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Quest Components | 5780 |
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$0.0560 / $0.2800 | Buy Now | |
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ComSIT USA | OPTIMOS SMALL-SIGNAL-TRANSISTOR Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 9000 |
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RFQ |
Part Details for 2N7002H6327
2N7002H6327 CAD Models
2N7002H6327 Part Data Attributes
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2N7002H6327
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
2N7002H6327
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.3 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 3 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for 2N7002H6327
This table gives cross-reference parts and alternative options found for 2N7002H6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002H6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N7002EQ-13-F | Small Signal Field-Effect Transistor, | Diodes Incorporated | 2N7002H6327 vs 2N7002EQ-13-F |
2N7002-AU_R1_000A1 | Small Signal Field-Effect Transistor, | PanJit Semiconductor | 2N7002H6327 vs 2N7002-AU_R1_000A1 |
2N7002E-T1 | Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, TO-236, 3 PIN | Vishay Siliconix | 2N7002H6327 vs 2N7002E-T1 |
2N7002LT1-TP | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOT-23, 3 PIN | Micro Commercial Components | 2N7002H6327 vs 2N7002LT1-TP |
2N7002LT1 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, SOT-23, 3 PIN | Micro Commercial Components | 2N7002H6327 vs 2N7002LT1 |
2N7002E | Small Signal Field-Effect Transistor, | Panasonic Electronic Components | 2N7002H6327 vs 2N7002E |
2N7002E | Small Signal Field-Effect Transistor, | Taitron Components Inc | 2N7002H6327 vs 2N7002E |
2N7002E-7-F | Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-3 | Diodes Incorporated | 2N7002H6327 vs 2N7002E-7-F |
2N7002E-13-F | Small Signal Field-Effect Transistor | Diodes Incorporated | 2N7002H6327 vs 2N7002E-13-F |
2N7002E-13 | Small Signal Field-Effect Transistor, 0.24A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 | Diodes Incorporated | 2N7002H6327 vs 2N7002E-13 |