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2N7002BKM - 60 V N-channel Trench MOSFET@en-us DFN 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
55T7737
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Newark | Mosfet, N Channel, 60V, 0.45A, Sot883, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:450Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Nexperia 2N7002BKM,315 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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NexGen Digital | 2 |
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RFQ | ||
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Chip1Cloud | MOSFET N-CH 60V 450MA SOT883 | 4000 |
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RFQ | |
DISTI #
1894707RL
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Farnell | MOSFET, N CH, 60V, 0.45A, SOT883 RoHS: Compliant Min Qty: 100 Lead time: 15 Weeks, 1 Days Container: Reel | 0 |
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$0.1151 | Buy Now |
DISTI #
1894707
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Farnell | MOSFET, N CH, 60V, 0.45A, SOT883 RoHS: Compliant Min Qty: 5 Lead time: 15 Weeks, 1 Days Container: Cut Tape | 0 |
|
$0.1151 / $0.4379 | Buy Now |
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2N7002BKM,315
Nexperia
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Datasheet
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2N7002BKM,315
Nexperia
2N7002BKM - 60 V N-channel Trench MOSFET@en-us DFN 3-Pin
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | DFN | |
Package Description | CHIP CARRIER, R-PBCC-N3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT883 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.45 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PBCC-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |