Datasheets
2N7002-T1-GE3 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for 2N7002-T1-GE3 by Vishay Intertechnologies

Overview of 2N7002-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for 2N7002-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 15R6202
Newark Sot23 Nch Mosfet 60V 7.5R |Vishay 2N7002-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.1890
  • 5,000 $0.1790
  • 10,000 $0.1560
  • 20,000 $0.1390
  • 30,000 $0.1280
  • 50,000 $0.1170
$0.1170 / $0.1890 Buy Now
DISTI # 79AH9218
Newark Sot23 Nch Mosfet 60V 7.5R Rohs Compliant: No |Vishay 2N7002-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.1550
$0.1550 Buy Now
DISTI # 2N7002-T1-GE3
Avnet Americas SOT23 NCH MOSFET 60V 7.5R - Tape and Reel (Alt: 2N7002-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.0967
  • 6,000 $0.0936
  • 12,000 $0.0905
  • 18,000 $0.0874
  • 24,000 $0.0840
  • 30,000 $0.0801
  • 300,000 $0.0761
$0.0761 / $0.0967 Buy Now
DISTI # 781-2N7002-GE3
Mouser Electronics MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS: Compliant 600240
  • 1 $0.4000
  • 10 $0.3340
  • 100 $0.1690
  • 1,000 $0.1180
  • 3,000 $0.1120
$0.1120 / $0.4000 Buy Now
DISTI # V72:2272_09215335
Arrow Electronics Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2226 Container: Cut Strips Americas - 693
  • 1 $0.3802
  • 10 $0.3167
  • 25 $0.3142
  • 100 $0.1616
  • 250 $0.1601
  • 500 $0.1050
$0.1050 / $0.3802 Buy Now
Future Electronics 60V 115mA 0.2W 7.5ohm @ 10V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks 0
  • 3,000 $0.0643
$0.0643 Buy Now
DISTI # 69066601
Verical Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 250 Package Multiple: 1 Date Code: 2247 Americas - 2924
  • 250 $0.1250
  • 500 $0.0852
  • 1,000 $0.0826
  • 2,000 $0.0793
$0.0793 / $0.1250 Buy Now
DISTI # 62506385
Verical Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 78 Package Multiple: 1 Date Code: 2226 Americas - 693
  • 78 $0.3142
  • 100 $0.1616
  • 250 $0.1601
  • 500 $0.1050
$0.1050 / $0.3142 Buy Now
DISTI # 2N7002-T1-GE3
TTI MOSFET 60V 115mA 0.2W 7.5ohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel Americas - 39000
In Stock
  • 3,000 $0.1110
$0.1110 Buy Now
DISTI # 2N7002-T1-GE3
TME Transistor: N-MOSFET, unipolar, 60V, 0.115A, Idm: 0.8A, 0.08W, SOT23 Min Qty: 10 1779
  • 10 $0.2480
  • 50 $0.1410
  • 250 $0.1280
  • 1,000 $0.1130
  • 3,000 $0.1010
$0.1010 / $0.2480 Buy Now
DISTI # C1S803605468325
Chip1Stop Trans MOSFET N-CH 60V 0.115A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant pbFree: Yes Container: Cut Tape 2924
  • 5 $0.2470
  • 50 $0.2040
  • 100 $0.1050
  • 200 $0.1000
  • 500 $0.0682
  • 1,000 $0.0661
  • 2,000 $0.0634
$0.0634 / $0.2470 Buy Now

Part Details for 2N7002-T1-GE3

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2N7002-T1-GE3 Part Data Attributes

2N7002-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
2N7002-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 6 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.115 A
Drain-source On Resistance-Max 7.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.2 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for 2N7002-T1-GE3

This table gives cross-reference parts and alternative options found for 2N7002-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N7002-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N7002 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, InterFET Corporation 2N7002-T1-GE3 vs 2N7002
2N7002L N-Channel Small Signal MOSFET 60V 115mA 7.5 Ω N-Channel MOSFET 60V 115mA 7.5 ?, 3000-REEL onsemi 2N7002-T1-GE3 vs 2N7002L
2N7002LT1G SOT23, N-Channel MOSFET - 60V 115MA 7.5Ohm  SOT23, N-Ch Mosfet - 60V 115MA 7.5O, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi 2N7002-T1-GE3 vs 2N7002LT1G
2N7002TQ-7-F Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC PACKAGE-3 Diodes Incorporated 2N7002-T1-GE3 vs 2N7002TQ-7-F
2N7002T Small Signal Field-Effect Transistor, Tak Cheong Electronics (Holdings) Co Ltd 2N7002-T1-GE3 vs 2N7002T
2N7002LT3 115mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, CASE 318-08, TO-236, 3 PIN onsemi 2N7002-T1-GE3 vs 2N7002LT3
2N7002T7-7 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Diodes Incorporated 2N7002-T1-GE3 vs 2N7002T7-7
2N7002L Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, Motorola Semiconductor Products 2N7002-T1-GE3 vs 2N7002L
2N7002TRL TRANSISTOR 180 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors 2N7002-T1-GE3 vs 2N7002TRL
2N7002T,215 2N7002T - N-channel TrenchMOS logic level FET TO-236 3-Pin NXP Semiconductors 2N7002-T1-GE3 vs 2N7002T,215
Part Number Description Manufacturer Compare
BS170RLRMG Single N-Channel Small Signal MOSFET 60V, 500mA, 5Ω, TO-92 (TO-226) 5.33mm Body Height, 2000-FNFLD onsemi 2N7002-T1-GE3 vs BS170RLRMG
VN0116N3P003 Small Signal Field-Effect Transistor, 0.25A I(D), 160V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc 2N7002-T1-GE3 vs VN0116N3P003
VN1310N3P008 Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc 2N7002-T1-GE3 vs VN1310N3P008
SN7002NL6327 Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-3 Infineon Technologies AG 2N7002-T1-GE3 vs SN7002NL6327
BSS123 Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Nexperia 2N7002-T1-GE3 vs BSS123
MMBF5103S62Z N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB Texas Instruments 2N7002-T1-GE3 vs MMBF5103S62Z
VN1310N3P001 Small Signal Field-Effect Transistor, 0.25A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Supertex Inc 2N7002-T1-GE3 vs VN1310N3P001
MMBF5103D87Z TRANSISTOR N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, FET General Purpose Small Signal National Semiconductor Corporation 2N7002-T1-GE3 vs MMBF5103D87Z
SSM3J313T TRANSISTOR 1600 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSM, 2-3S1A, 3 PIN, FET General Purpose Small Signal Toshiba America Electronic Components 2N7002-T1-GE3 vs SSM3J313T
ZVP4424CSTOF Small Signal Field-Effect Transistor, 0.2A I(D), 240V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Diodes Incorporated 2N7002-T1-GE3 vs ZVP4424CSTOF

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