Datasheets
2N6659 by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Part Details for 2N6659 by Vishay Siliconix

Overview of 2N6659 by Vishay Siliconix

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Price & Stock for 2N6659

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 1 8
  • 1 $6.7200
  • 5 $4.3680
$4.3680 / $6.7200 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-39 1
  • 1 $4.4400
$4.4400 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-39 5
  • 1 $4.4400
  • 3 $3.7000
$3.7000 / $4.4400 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-39 6
  • 1 $9.0000
  • 2 $6.0000
  • 5 $4.5000
$4.5000 / $9.0000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-39 140
  • 1 $77.7888
  • 31 $62.2310
  • 81 $60.2863
$60.2863 / $77.7888 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-39 35
  • 1 $4.4400
  • 8 $3.2560
  • 24 $2.9600
$2.9600 / $4.4400 Buy Now
ComSIT USA N-CHANNEL ENHANCEMENT-MODE MOSFET TRANSISTOR Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD RoHS: Not Compliant Europe - 100
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Part Details for 2N6659

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2N6659 Part Data Attributes:

2N6659 Vishay Siliconix
Buy Now Datasheet
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2N6659 Vishay Siliconix Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SILICONIX INC
Part Package Code BCY
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE
Drain Current-Max (ID) 2 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 6.25 W
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for 2N6659

This table gives cross-reference parts and alternative options found for 2N6659. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of 2N6659, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
2N6659 TRANSISTOR 1400 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39, TO-39, 3 PIN, FET General Purpose Small Signal NXP Semiconductors 2N6659 vs 2N6659
2N6659 Small Signal Field-Effect Transistor, 1-Element, Silicon, TO-39, TT Electronics Resistors 2N6659 vs 2N6659
2N6659 Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Supertex Inc 2N6659 vs 2N6659
2N6659 1400mA, 35V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39 Motorola Mobility LLC 2N6659 vs 2N6659
2N6659 Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 Motorola Semiconductor Products 2N6659 vs 2N6659
2N6659 Small Signal Field-Effect Transistor, 35V, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN Crimson Semiconductor Inc 2N6659 vs 2N6659
2N6659 Small Signal Field-Effect Transistor, 1.4A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD, TO-39, 3 PIN Vishay Intertechnologies 2N6659 vs 2N6659
2N6659 Si, SMALL SIGNAL, FET, TO-39 TT Electronics Power and Hybrid / Semelab Limited 2N6659 vs 2N6659
Part Number Description Manufacturer Compare
MMBF5103 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation 2N6659 vs MMBF5103
BSS119E-6327 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN Infineon Technologies AG 2N6659 vs BSS119E-6327
VP2206N2 Small Signal Field-Effect Transistor, 0.75A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, GREEN TO-39, 3 PIN Supertex Inc 2N6659 vs VP2206N2
VP2110K1-G Small Signal Field-Effect Transistor, 0.12A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3 Supertex Inc 2N6659 vs VP2110K1-G
2N7008-G Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc 2N6659 vs 2N7008-G
2N7002-G Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, GREEN PACKAGE-3 Supertex Inc 2N6659 vs 2N7002-G
VP0204N2 Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN Supertex Inc 2N6659 vs VP0204N2
VP0210N5 Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Supertex Inc 2N6659 vs VP0210N5
TP2104N3-G Small Signal Field-Effect Transistor, 0.25A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc 2N6659 vs TP2104N3-G
2N6661 Small Signal Field-Effect Transistor, 0.35A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN Supertex Inc 2N6659 vs 2N6661

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