WS5.0P6SMB vs SMBJP6KE6.8AE3TR feature comparison

WS5.0P6SMB Cyg Wayon Circuit Protection Co Ltd

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SMBJP6KE6.8AE3TR Microsemi Corporation

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Rohs Code Yes Yes
Part Life Cycle Code Contact Manufacturer Transferred
Ihs Manufacturer CYG WAYON CIRCUIT PROTECTION CO LTD MICROSEMI CORP
Package Description R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8541.10.00.50 8541.10.00.50
Additional Feature EXCELLENT CLAMPING CAPABILITY TR, 7 INCH: 750
Breakdown Voltage-Max 7.07 V 7.14 V
Breakdown Voltage-Min 6.4 V 6.45 V
Configuration SINGLE SINGLE
Diode Element Material SILICON SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 Code DO-214AA DO-214AA
JESD-30 Code R-PDSO-C2 R-PDSO-C2
Non-rep Peak Rev Power Dis-Max 600 W 600 W
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W 1.38 W
Rep Pk Reverse Voltage-Max 5 V 5.8 V
Surface Mount YES YES
Technology AVALANCHE AVALANCHE
Terminal Form C BEND C BEND
Terminal Position DUAL DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Number Matches 2 10
Part Package Code DO-214AA
Pin Count 2

Compare WS5.0P6SMB with alternatives

Compare SMBJP6KE6.8AE3TR with alternatives