SPI07N60C3 vs FQI12N60TU feature comparison

SPI07N60C3 Infineon Technologies AG

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FQI12N60TU Rochester Electronics LLC

Buy Now Datasheet
Pbfree Code Yes Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG ROCHESTER ELECTRONICS LLC
Part Package Code TO-262AA TO-262AA
Package Description IN-LINE, R-PSIP-T3 I2PAK-3
Pin Count 3 3
Reach Compliance Code compliant unknown
ECCN Code EAR99
Factory Lead Time 4 Weeks
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 230 mJ 790 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V 600 V
Drain Current-Max (ID) 7.3 A 10.5 A
Drain-source On Resistance-Max 0.6 Ω 0.7 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA TO-262AA
JESD-30 Code R-PSIP-T3 R-PSIP-T3
Moisture Sensitivity Level 1 NOT SPECIFIED
Number of Elements 1 1
Number of Terminals 3 3
Operating Mode ENHANCEMENT MODE ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED NOT SPECIFIED
Polarity/Channel Type N-CHANNEL N-CHANNEL
Power Dissipation-Max (Abs) 83 W
Pulsed Drain Current-Max (IDM) 21.9 A 42 A
Qualification Status Not Qualified COMMERCIAL
Surface Mount NO NO
Terminal Form THROUGH-HOLE THROUGH-HOLE
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED NOT SPECIFIED
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Base Number Matches 2 2
Terminal Finish NOT SPECIFIED

Compare SPI07N60C3 with alternatives

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