SMBJ18A-E3/52 vs SMBJ18A feature comparison

SMBJ18A-E3/52 Vishay Semiconductors

Buy Now Datasheet

SMBJ18A DB Lectro Inc

Buy Now Datasheet
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active Contact Manufacturer
Ihs Manufacturer VISHAY SEMICONDUCTORS DB LECTRO INC
Part Package Code DO-214AA
Package Description R-PDSO-C2
Pin Count 2
Reach Compliance Code unknown unknown
ECCN Code EAR99
HTS Code 8541.10.00.50
Samacsys Manufacturer Vishay
Additional Feature EXCELLENT CLAMPING CAPABILITY, UL RECOGNIZED
Breakdown Voltage-Max 22.1 V
Breakdown Voltage-Min 20 V
Breakdown Voltage-Nom 21.05 V 21.1 V
Clamping Voltage-Max 29.2 V 29.2 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
Forward Voltage-Max (VF) 3.5 V
JEDEC-95 Code DO-214AA
JESD-30 Code R-PDSO-C2
JESD-609 Code e3
Moisture Sensitivity Level 1
Non-rep Peak Rev Power Dis-Max 600 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity UNIDIRECTIONAL UNIDIRECTIONAL
Power Dissipation-Max 5 W
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Rep Pk Reverse Voltage-Max 18 V 18 V
Reverse Current-Max 1 µA
Reverse Test Voltage 18 V
Surface Mount YES YES
Technology AVALANCHE
Terminal Finish Matte Tin (Sn)
Terminal Form C BEND
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Base Number Matches 1 1

Compare SMBJ18A-E3/52 with alternatives

Compare SMBJ18A with alternatives