SB3505GW vs KBPC35005(W) feature comparison

SB3505GW Taiwan Semiconductor

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KBPC35005(W) Galaxy Microelectronics

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Rohs Code Yes Yes
Part Life Cycle Code Obsolete Contact Manufacturer
Ihs Manufacturer TAIWAN SEMICONDUCTOR CO LTD CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code unknown unknown
ECCN Code EAR99 EAR99
Breakdown Voltage-Min 50 V 50 V
Case Connection ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode Type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Forward Voltage-Max (VF) 1.1 V 1.1 V
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 400 A 400 A
Number of Elements 4 4
Number of Phases 1 1
Operating Temperature-Max 150 °C 125 °C
Output Current-Max 35 A 35 A
Peak Reflow Temperature (Cel) 260 260
Rep Pk Reverse Voltage-Max 50 V 50 V
Surface Mount NO NO
Base Number Matches 1 2
HTS Code 8541.10.00.80
Diode Element Material SILICON
JESD-30 Code S-PUFM-W4
Number of Terminals 4
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style FLANGE MOUNT
Reverse Current-Max 10 µA
Reverse Test Voltage 50 V
Terminal Form WIRE
Terminal Position UPPER

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