NJVMJD32CT4G-VF01
vs
MJD32CTM
feature comparison
| Pbfree Code |
Yes
|
Yes
|
| Rohs Code |
Yes
|
|
| Part Life Cycle Code |
Obsolete
|
Obsolete
|
| Ihs Manufacturer |
ONSEMI
|
ONSEMI
|
| Package Description |
DPAK-3/2
|
|
| Reach Compliance Code |
not_compliant
|
not_compliant
|
| ECCN Code |
EAR99
|
EAR99
|
| Date Of Intro |
2017-02-10
|
|
| Samacsys Manufacturer |
onsemi
|
onsemi
|
| Samacsys Modified On |
2021-07-27 09:36:08
|
|
| Case Connection |
COLLECTOR
|
|
| Collector Current-Max (IC) |
3 A
|
3 A
|
| Collector-Emitter Voltage-Max |
100 V
|
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
10
|
10
|
| JESD-30 Code |
R-PSSO-G2
|
|
| JESD-609 Code |
e3
|
e3
|
| Moisture Sensitivity Level |
1
|
1
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
2
|
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-65 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
|
| Package Shape |
RECTANGULAR
|
|
| Package Style |
SMALL OUTLINE
|
|
| Peak Reflow Temperature (Cel) |
260
|
260
|
| Polarity/Channel Type |
PNP
|
PNP
|
| Reference Standard |
AEC-Q101
|
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
MATTE TIN
|
Tin (Sn)
|
| Terminal Form |
GULL WING
|
|
| Terminal Position |
SINGLE
|
|
| Time@Peak Reflow Temperature-Max (s) |
30
|
30
|
| Transistor Application |
AMPLIFIER
|
|
| Transistor Element Material |
SILICON
|
|
| Transition Frequency-Nom (fT) |
3 MHz
|
3 MHz
|
| Base Number Matches |
1
|
1
|
| Manufacturer Package Code |
|
369AK
|
| Power Dissipation-Max (Abs) |
|
15 W
|
|
|
|
Compare NJVMJD32CT4G-VF01 with alternatives
Compare MJD32CTM with alternatives