NJVMJD32CT4G-VF01 vs BSP19T/R feature comparison

NJVMJD32CT4G-VF01 onsemi

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BSP19T/R Nexperia

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Pbfree Code Yes
Rohs Code Yes Yes
Part Life Cycle Code Obsolete Active
Ihs Manufacturer ONSEMI NEXPERIA
Package Description DPAK-3/2 ,
Reach Compliance Code not_compliant compliant
ECCN Code EAR99 EAR99
Date Of Intro 2017-02-10 2017-02-01
Samacsys Manufacturer onsemi
Case Connection COLLECTOR COLLECTOR
Collector Current-Max (IC) 3 A 0.1 A
Collector-Emitter Voltage-Max 100 V 350 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 10 40
JESD-30 Code R-PSSO-G2 R-PDSO-G4
JESD-609 Code e3 e3
Moisture Sensitivity Level 1 1
Number of Elements 1 1
Number of Terminals 2 4
Operating Temperature-Max 150 °C 150 °C
Operating Temperature-Min -65 °C -65 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 260
Polarity/Channel Type PNP NPN
Reference Standard AEC-Q101 IEC-134
Surface Mount YES YES
Terminal Finish MATTE TIN TIN
Terminal Form GULL WING GULL WING
Terminal Position SINGLE DUAL
Time@Peak Reflow Temperature-Max (s) 30 30
Transistor Application AMPLIFIER SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 3 MHz 70 MHz
Base Number Matches 1 1
Collector-Base Capacitance-Max 2.5 pF
Power Dissipation-Max (Abs) 1.2 W
VCEsat-Max 0.5 V

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