MTA4ATF51264HZ-3G2R1
vs
MTA4ATF51264HZ-3G2E1
feature comparison
| Rohs Code |
Yes
|
Yes
|
| Part Life Cycle Code |
Active
|
Obsolete
|
| Ihs Manufacturer |
MICRON TECHNOLOGY INC
|
MICRON TECHNOLOGY INC
|
| Reach Compliance Code |
unknown
|
compliant
|
| Factory Lead Time |
13 Weeks, 3 Days
|
|
| Samacsys Manufacturer |
Micron
|
Micron
|
| Base Number Matches |
1
|
1
|
| Package Description |
|
DIMM,
|
| ECCN Code |
|
EAR99
|
| HTS Code |
|
8542.32.00.36
|
| Date Of Intro |
|
2017-05-26
|
| Access Mode |
|
SINGLE BANK PAGE BURST
|
| Additional Feature |
|
WD-MAX
|
| JESD-30 Code |
|
R-XZMA-N260
|
| Length |
|
69.6 mm
|
| Memory Density |
|
34359738368 bit
|
| Memory IC Type |
|
DDR DRAM MODULE
|
| Memory Width |
|
64
|
| Number of Functions |
|
1
|
| Number of Ports |
|
1
|
| Number of Terminals |
|
260
|
| Number of Words |
|
536870912 words
|
| Number of Words Code |
|
512000000
|
| Operating Mode |
|
SYNCHRONOUS
|
| Operating Temperature-Max |
|
95 °C
|
| Operating Temperature-Min |
|
|
| Organization |
|
512MX64
|
| Package Body Material |
|
UNSPECIFIED
|
| Package Code |
|
DIMM
|
| Package Shape |
|
RECTANGULAR
|
| Package Style |
|
MICROELECTRONIC ASSEMBLY
|
| Peak Reflow Temperature (Cel) |
|
NOT SPECIFIED
|
| Seated Height-Max |
|
30.13 mm
|
| Supply Voltage-Max (Vsup) |
|
1.26 V
|
| Supply Voltage-Min (Vsup) |
|
1.14 V
|
| Supply Voltage-Nom (Vsup) |
|
1.2 V
|
| Surface Mount |
|
NO
|
| Technology |
|
CMOS
|
| Temperature Grade |
|
OTHER
|
| Terminal Form |
|
NO LEAD
|
| Terminal Position |
|
ZIG-ZAG
|
| Time@Peak Reflow Temperature-Max (s) |
|
NOT SPECIFIED
|
| Width |
|
2.5 mm
|
|
|
|
Compare MTA4ATF51264HZ-3G2R1 with alternatives
Compare MTA4ATF51264HZ-3G2E1 with alternatives