MRFG35010MT1
vs
MRFG35010R1
feature comparison
| Rohs Code |
No
|
Yes
|
| Part Life Cycle Code |
Transferred
|
Transferred
|
| Ihs Manufacturer |
FREESCALE SEMICONDUCTOR INC
|
FREESCALE SEMICONDUCTOR INC
|
| Package Description |
SMALL OUTLINE, R-PQSO-N4
|
FLANGE MOUNT, R-PDFM-F2
|
| Pin Count |
4
|
2
|
| Manufacturer Package Code |
CASE 466-03
|
CASE 360D-02
|
| Reach Compliance Code |
not_compliant
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.29.00.75
|
8541.29.00.75
|
| Case Connection |
SOURCE
|
SOURCE
|
| Configuration |
SINGLE
|
SINGLE
|
| DS Breakdown Voltage-Min |
15 V
|
15 V
|
| FET Technology |
HIGH ELECTRON MOBILITY
|
HIGH ELECTRON MOBILITY
|
| Highest Frequency Band |
S BAND
|
S BAND
|
| JESD-30 Code |
R-PQSO-N4
|
R-PDFM-F2
|
| JESD-609 Code |
e0
|
|
| Moisture Sensitivity Level |
1
|
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
4
|
2
|
| Operating Mode |
DEPLETION MODE
|
DEPLETION MODE
|
| Operating Temperature-Max |
85 °C
|
175 °C
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
RECTANGULAR
|
| Package Style |
SMALL OUTLINE
|
FLANGE MOUNT
|
| Peak Reflow Temperature (Cel) |
260
|
NOT SPECIFIED
|
| Polarity/Channel Type |
N-CHANNEL
|
N-CHANNEL
|
| Power Dissipation Ambient-Max |
22.7 W
|
28.3 W
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
YES
|
| Terminal Finish |
Tin/Lead (Sn/Pb)
|
|
| Terminal Form |
NO LEAD
|
FLAT
|
| Terminal Position |
QUAD
|
DUAL
|
| Time@Peak Reflow Temperature-Max (s) |
40
|
NOT SPECIFIED
|
| Transistor Application |
AMPLIFIER
|
AMPLIFIER
|
| Transistor Element Material |
GALLIUM ARSENIDE
|
GALLIUM ARSENIDE
|
| Base Number Matches |
1
|
1
|
|
|
|
Compare MRFG35010MT1 with alternatives
Compare MRFG35010R1 with alternatives