MMBT3906/L99Z
vs
2N5089
feature comparison
| Part Life Cycle Code |
Obsolete
|
Contact Manufacturer
|
| Ihs Manufacturer |
NATIONAL SEMICONDUCTOR CORP
|
MICRO ELECTRONICS LTD
|
| Package Description |
SMALL OUTLINE, R-PDSO-G3
|
CYLINDRICAL, O-PBCY-W3
|
| Reach Compliance Code |
unknown
|
unknown
|
| ECCN Code |
EAR99
|
EAR99
|
| HTS Code |
8541.21.00.75
|
|
| Collector Current-Max (IC) |
0.2 A
|
0.05 A
|
| Collector-Base Capacitance-Max |
4.5 pF
|
|
| Collector-Emitter Voltage-Max |
40 V
|
25 V
|
| Configuration |
SINGLE
|
SINGLE
|
| DC Current Gain-Min (hFE) |
30
|
400
|
| JEDEC-95 Code |
TO-236AB
|
TO-92
|
| JESD-30 Code |
R-PDSO-G3
|
O-PBCY-W3
|
| Number of Elements |
1
|
1
|
| Number of Terminals |
3
|
3
|
| Operating Temperature-Max |
150 °C
|
150 °C
|
| Operating Temperature-Min |
-55 °C
|
|
| Package Body Material |
PLASTIC/EPOXY
|
PLASTIC/EPOXY
|
| Package Shape |
RECTANGULAR
|
ROUND
|
| Package Style |
SMALL OUTLINE
|
CYLINDRICAL
|
| Polarity/Channel Type |
PNP
|
NPN
|
| Power Dissipation Ambient-Max |
0.35 W
|
|
| Qualification Status |
Not Qualified
|
Not Qualified
|
| Surface Mount |
YES
|
NO
|
| Terminal Form |
GULL WING
|
WIRE
|
| Terminal Position |
DUAL
|
BOTTOM
|
| Transistor Application |
SWITCHING
|
AMPLIFIER
|
| Transistor Element Material |
SILICON
|
SILICON
|
| Transition Frequency-Nom (fT) |
250 MHz
|
50 MHz
|
| Turn-off Time-Max (toff) |
300 ns
|
|
| Turn-on Time-Max (ton) |
70 ns
|
|
| VCEsat-Max |
0.4 V
|
|
| Base Number Matches |
1
|
1
|
| Power Dissipation-Max (Abs) |
|
0.35 W
|
|
|
|
Compare MMBT3906/L99Z with alternatives
Compare 2N5089 with alternatives