MJD44H11T4 vs MJD44H11-T1 feature comparison

MJD44H11T4 STMicroelectronics

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MJD44H11-T1 Samsung Semiconductor

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Rohs Code Yes
Part Life Cycle Code Active Obsolete
Ihs Manufacturer STMICROELECTRONICS SAMSUNG SEMICONDUCTOR INC
Reach Compliance Code not_compliant unknown
ECCN Code EAR99 EAR99
HTS Code 8541.29.00.75 8541.29.00.75
Factory Lead Time 19 Weeks
Samacsys Manufacturer STMicroelectronics
Collector Current-Max (IC) 8 A 8 A
Collector-Emitter Voltage-Max 80 V 80 V
Configuration SINGLE SINGLE
DC Current Gain-Min (hFE) 40 40
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1 1
Number of Terminals 2 2
Operating Temperature-Max 150 °C 150 °C
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Shape RECTANGULAR RECTANGULAR
Package Style SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN NPN
Power Dissipation Ambient-Max 20 W 20 W
Power Dissipation-Max (Abs) 20 W
Qualification Status Not Qualified Not Qualified
Surface Mount YES YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING GULL WING
Terminal Position SINGLE SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING SWITCHING
Transistor Element Material SILICON SILICON
Transition Frequency-Nom (fT) 50 MHz 50 MHz
VCEsat-Max 1 V 1 V
Base Number Matches 2 1
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 3

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