LM358N vs LM358EDR2G feature comparison

LM358N Silicon Group Inc

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LM358EDR2G onsemi

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Rohs Code No
Part Life Cycle Code Obsolete Active
Ihs Manufacturer SILICON GROUP INC ONSEMI
Package Description DIP-8 SOIC-8
Reach Compliance Code unknown compliant
ECCN Code EAR99 EAR99
HTS Code 8542.33.00.01 8542.33.00.01
Amplifier Type OPERATIONAL AMPLIFIER OPERATIONAL AMPLIFIER
Architecture VOLTAGE-FEEDBACK VOLTAGE-FEEDBACK
Bias Current-Max (IIB) @25C 0.25 µA 0.25 µA
Frequency Compensation YES YES
Input Offset Voltage-Max 9000 µV 7000 µV
JESD-30 Code R-PDIP-T8 R-PDSO-G8
Low-Offset NO NO
Number of Functions 2 2
Number of Terminals 8 8
Operating Temperature-Max 70 °C 70 °C
Operating Temperature-Min
Package Body Material PLASTIC/EPOXY PLASTIC/EPOXY
Package Code DIP SOP
Package Equivalence Code DIP8,.3 SOP8,.24
Package Shape RECTANGULAR RECTANGULAR
Package Style IN-LINE SMALL OUTLINE
Packing Method RAIL TR
Qualification Status Not Qualified
Supply Current-Max 2 mA 3 mA
Supply Voltage Limit-Max 16 V 32 V
Surface Mount NO YES
Technology BIPOLAR BIPOLAR
Temperature Grade COMMERCIAL COMMERCIAL
Terminal Form THROUGH-HOLE GULL WING
Terminal Pitch 2.54 mm 1.27 mm
Terminal Position DUAL DUAL
Voltage Gain-Min 15000 15000
Base Number Matches 1 1
Pbfree Code Yes
Manufacturer Package Code 751-07
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Average Bias Current-Max (IIB) 0.5 µA
Common-mode Reject Ratio-Min 65 dB
Common-mode Reject Ratio-Nom 70 dB
Input Offset Current-Max (IIO) 0.15 µA
JESD-609 Code e3
Length 4.9 mm
Moisture Sensitivity Level 1
Peak Reflow Temperature (Cel) 260
Screening Level AEC-Q100
Seated Height-Max 1.75 mm
Slew Rate-Nom 0.6 V/us
Supply Voltage-Nom (Vsup) 5 V
Terminal Finish MATTE TIN
Time@Peak Reflow Temperature-Max (s) 30
Unity Gain BW-Nom 1000
Width 3.9 mm

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